Authors:
DAHAN P
FLEUROV V
THURIAN P
HEITZ R
HOFFMANN A
BROSER I
Citation: P. Dahan et al., PROPERTIES OF THE INTERMEDIATELY BOUND ALPHA-EXCITON, BETA-EXCITON AND GAMMA-EXCITON IN ZNO-CU, Journal of physics. Condensed matter, 10(9), 1998, pp. 2007-2019
Authors:
DAHAN P
FLEUROV V
THURIAN P
HEITZ R
HOFFMANN A
BROSER I
Citation: P. Dahan et al., ISOTOPE SHIFT IN SEMICONDUCTORS WITH TRANSITION-METAL IMPURITIES - EXPERIMENT AND THEORY APPLIED TO ZNO-CU, Physical review. B, Condensed matter, 57(16), 1998, pp. 9690-9694
Authors:
BORN H
THURIAN P
SURKOVA T
HOFFMANN A
BUSSE W
GUMLICH HE
BROSER I
GIRIAT W
Citation: H. Born et al., PHOTOLUMINESCENCE DYNAMICS OF CO-DOPED ZN1-XCDXSE AND ZNSXSE1-X CRYSTALS, Journal of crystal growth, 185, 1998, pp. 1132-1136
Authors:
SCHREPEL C
GOBEL C
SCHERZ U
THURIAN P
KACZMARCZYK G
HOFFMANN A
Citation: C. Schrepel et al., ISOTOPE SHIFT OF LOCAL VIBRATIONAL-MODES AT TRANSITION-METAL IMPURITIES IN SEMICONDUCTORS, Zeitschrift für physikalische Chemie, 201, 1997, pp. 21-30
Authors:
SIEGLE H
LOA I
THURIAN P
ECKEY L
HOFFMANN A
BROSER I
THOMSEN C
Citation: H. Siegle et al., SHALLOW DONORS IN GAN STUDIED BY ELECTRONIC RAMAN-SCATTERING IN RESONANCE WITH YELLOW LUMINESCENCE TRANSITIONS - COMMENT, Applied physics letters, 70(7), 1997, pp. 909-909
Authors:
PRESSEL K
NILSSON S
WETZEL C
VOLM D
MEYER BK
LOA I
THURIAN P
HEITZ R
HOFFMANN A
MOKHOV EN
BARANOV PG
Citation: K. Pressel et al., OPTICAL INVESTIGATION OF DEEP DEFECTS IN GAN EPITAXIAL LAYERS GROWN ON 6H-SIC, Materials science and technology, 12(1), 1996, pp. 90-93
Authors:
TELAHUN T
SCHERZ U
THURIAN P
HEITZ R
HOFFMANN A
BROSER I
Citation: T. Telahun et al., NONLINEAR ZEEMAN BEHAVIOR OF CU2-TELLER EFFECT( CENTERS IN ZNS AND CDS EXPLAINED BY A JAHN), Physical review. B, Condensed matter, 53(3), 1996, pp. 1274-1286
Authors:
SIEGLE H
THURIAN P
ECKEY L
HOFFMANN A
THOMSEN C
MEYER BK
AMANO H
AKASAKI I
DETCHPROHM T
HIRAMATSU K
Citation: H. Siegle et al., SPATIALLY-RESOLVED PHOTOLUMINESCENCE AND RAMAN-SCATTERING EXPERIMENTSON THE GAN SUBSTRATE INTERFACE, Applied physics letters, 68(9), 1996, pp. 1265-1266
Authors:
HEITZ R
THURIAN P
LOA I
ECKEY L
HOFFMANN A
BROSER I
PRESSEL K
MEYER BK
MOKHOV EN
Citation: R. Heitz et al., IDENTIFICATION OF THE 1.19-EV LUMINESCENCE IN HEXAGONAL GAN, Physical review. B, Condensed matter, 52(23), 1995, pp. 16508-16515
Authors:
HOFFMANN A
SIEGLE H
ECKEY L
LUMMER B
THURIAN P
HEITZ R
MEYER BK
WETZEL C
HOFMANN DM
HARLE V
SCHOLZ F
KOHL A
Citation: A. Hoffmann et al., RECOMBINATION DYNAMICS IN STRAINED IN1-XGAXAS INP QUANTUM-WELL STRUCTURES/, Superlattices and microstructures, 15(3), 1994, pp. 303-307
Authors:
BROSER I
PODLOWSKI L
THURIAN P
HEITZ R
HOFFMANN A
Citation: I. Broser et al., CALORIMETRIC ABSORPTION-SPECTROSCOPY OF COPPER CENTERS IN II-VI SEMICONDUCTORS AT MK TEMPERATURES, Journal of luminescence, 60-1, 1994, pp. 588-591
Authors:
PODLOWSKI L
HEITZ R
THURIAN P
HOFFMANN A
BROSER I
Citation: L. Podlowski et al., NONRADIATIVE TRANSITION RATES OF FE2-V AND II-VI SEMICONDUCTORS( IN III), Journal of luminescence, 58(1-6), 1994, pp. 252-256