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Results:
1-22
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Results: 22
Authors:
THURZO I
TERAMURA S
DURNY R
NADAZDY V
KUMEDA M
SHIMIZU T
Citation: I. Thurzo et al., DETERMINATION OF THE FLAT-BAND VOLTAGE AND THE ELECTRON THRESHOLD VOLTAGE OF A-SI-H BASED MIS STRUCTURES BY THE FEEDBACK CHARGE C-V METHOD, Journal of non-crystalline solids, 230, 1998, pp. 1226-1229
Authors:
NADAZDY V
DURNY R
THURZO I
PINCIK E
Citation: V. Nadazdy et al., NEW EXPERIMENTAL FACTS ON THE STAEBLER-WRONSKI EFFECT, Journal of non-crystalline solids, 230, 1998, pp. 316-319
Authors:
HARTMANOVA M
THURZO I
JERGEL M
BARTOS J
KADLEC F
ZELEZNY V
TUNEGA D
KUNDRACIK F
CHROMIK S
BRUNEL M
Citation: M. Hartmanova et al., CHARACTERIZATION OF YTTRIA-STABILIZED ZIRCONIA THIN-FILMS DEPOSITED BY ELECTRON-BEAM EVAPORATION ON SILICON SUBSTRATES, Journal of Materials Science, 33(4), 1998, pp. 969-975
Authors:
NADAZDY V
THURZO I
Citation: V. Nadazdy et I. Thurzo, SMALL-SIGNAL DEEP-LEVEL TRANSIENT SPECTROSCOPY AS A LOCAL PROBE OF POTENTIAL FLUCTUATIONS DUE TO ELECTRICALLY ACTIVE DEFECTS, Semiconductor science and technology, 12(2), 1997, pp. 157-165
Authors:
THURZO I
IVANCO J
Citation: I. Thurzo et J. Ivanco, ATTEMPTS TO CORRELATE HYDROGEN PLASMA-INDUCED AND SI3N4 GAAS INTERFACE-RELATED SURFACE-STATES - A CHARGE DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDY/, Applied surface science, 108(1), 1997, pp. 187-196
Authors:
THURZO I
PINCIK E
CICMANEC P
Citation: I. Thurzo et al., PROTON IMPLANTATION-INDUCED DAMAGE TO HEAVILY-DOPED N-GAAS AS ENVISAGED BY CHARGE DEEP-LEVEL TRANSIENT SPECTROSCOPY, Physica status solidi. a, Applied research, 162(2), 1997, pp. 547-557
Authors:
THURZO I
GMUCOVA K
Citation: I. Thurzo et K. Gmucova, CONSEQUENCES OF THE MEYER-NELDEL RULE FOR DLTS SPECTROSCOPY OF DISTRIBUTED TRAPS, Physica status solidi. a, Applied research, 160(1), 1997, pp. 89-96
Authors:
THURZO I
TERAMURA S
DURNY R
NADAZDY V
KUMEDA M
SHIMIZU T
Citation: I. Thurzo et al., CHARACTERIZATION OF A-SI-H BASED METAL INSULATOR/SEMICONDUCTOR STRUCTURES BY FEEDBACK CHARGE CAPACITANCE-VOLTAGE MEASUREMENTS AND CHARGE DEEP-LEVEL TRANSIENT SPECTROSCOPY/, Journal of applied physics, 82(9), 1997, pp. 4372-4377
Authors:
IVANCO J
THURZO I
HULENYI L
Citation: J. Ivanco et al., A STUDY ON THERMAL EMISSION OF CHARGES AT SI3N4-GAAS INTERFACES AFTERANNEALING IN N-2 AND N-2-2 MIXTURES(H), Materials science & engineering. B, Solid-state materials for advanced technology, 40(2-3), 1996, pp. 159-163
Authors:
THURZO I
GMUCOVA K
DUBECKY F
DARMO J
Citation: I. Thurzo et al., THERMAL CURRENTS FROM UNDOPED SEMIINSULATING GAAS MONITORED BY CHARGEDEEP-LEVEL TRANSIENT SPECTROSCOPY, International journal of modern physics b, 9(23), 1995, pp. 3099-3114
Authors:
THURZO I
PINCIK E
PAPAIOANNOU G
DIMITRAKIS P
ARPATZANIS N
Citation: I. Thurzo et al., EXPERIMENTAL-STUDY OF PASSIVATING ION-BEAM-INDUCED DISTRIBUTED ENERGY-LEVELS IN N-GAAS BY HYDROGEN SPECIES FROM BOILING WATER, Applied surface science, 90(1), 1995, pp. 39-45
Authors:
THURZO I
BARANCOK D
HALUSKA M
Citation: I. Thurzo et al., DOUBLE INTEGRATION OF CURRENT TRANSIENTS IN RESPONSE TO AN ABRUPT CHANGE OF APPLIED BIAS - APPLICATION TO DIELECTRICS, Review of scientific instruments, 66(11), 1995, pp. 5360-5366
Authors:
THURZO I
GMUCOVA K
CSABAY O
HARMATHA L
BURGHARDT H
BEYER R
Citation: I. Thurzo et al., AN EXPERIMENTAL-STUDY OF SIOXNY SI INTERFACES PREPARED BY RAPID THERMAL-PROCESSING - EVIDENCE FOR 2 GROUPS OF INTERFACE STATES/, Physica status solidi. a, Applied research, 151(2), 1995, pp. 345-353
Authors:
NADAZDY V
THURZO I
Citation: V. Nadazdy et I. Thurzo, DLTS AS A LOCAL PROBE OF CONCENTRATION AND DEPTH OF TRAP LEVELS, International journal of modern physics b, 8(13), 1994, pp. 1765-1779
Authors:
PINCIK E
THURZO I
NADAZDY V
BARTOS J
JERGEL M
KOCANDA J
Citation: E. Pincik et al., FORMATION OF ANODIC PLASMA OXIDES ON INP, GAAS AND SI THROUGH AL AND SM OVERLAYERS, Applied surface science, 78(3), 1994, pp. 239-248
Authors:
THURZO I
PINCIK E
Citation: I. Thurzo et E. Pincik, EXCESS CAPACITANCE OF AL N-GAAS SCHOTTKY DIODES PREPARED ON AR-(AR+H)-ION-BEAM-ETCHED SURFACES/, Applied surface science, 74(2), 1994, pp. 135-145
Authors:
THURZO I
GMUCOVA K
Citation: I. Thurzo et K. Gmucova, SWITCHING BETWEEN DEEP-LEVEL TRANSIENT SPECTROSCOPY AND FEEDBACK CHARGE CAPACITANCE MODES IN A VERSATILE TIME-DOMAIN SPECTROMETER, Review of scientific instruments, 65(7), 1994, pp. 2244-2248
Authors:
IVANCO J
THURZO I
PINCIK E
Citation: J. Ivanco et al., INFLUENCE OF PLASMA ON SILICON SURFACE DURING LOW-ENERGY PLASMA DEPOSITION PROCESS - THE COMPARATIVE-STUDY ON SI3N4 SI STRUCTURES/, Applied physics letters, 65(20), 1994, pp. 2594-2596
Authors:
IVANCO J
BALVINSKY OE
THURZO I
BARTOS J
PINCIK E
Citation: J. Ivanco et al., ON THE ACCUMULATION CAPACITANCE OF SI3N-4 SI/GAAS STRUCTURES FABRICATED IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA/, Applied surface science, 72(1), 1993, pp. 31-37
Authors:
THURZO I
HRUBCIN L
BARTOS J
PINCIK E
Citation: I. Thurzo et al., CURRENT-VOLTAGE CHARACTERISTICS AND CHARGE DLTS SPECTRA OF PROTON-BOMBARDED SCHOTTKY DIODES ON SEMIINSULATING GAAS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 83(1-2), 1993, pp. 145-152
Authors:
BARTOS J
PINCIK E
THURZO I
BALVINSKIJ OE
IVANCO J
Citation: J. Bartos et al., AN INTERPRETATION OF DLTS SPECTRA OF AL SI3N4/ULTRATHIN SI/GAAS STRUCTURES - EFFECT OF QUANTUM-WELL OR INTERFACE STATES/, Czechoslovak journal of Physics, 43(9-10), 1993, pp. 875-879
Authors:
THURZO I
PINCIK E
HARMATHA L
Citation: I. Thurzo et al., TRANSIENT CHARGING OF MIS DIODES PREPARED BY AL OVERLAYER INDUCED PLASMA OXIDATION OF INP, Semiconductor science and technology, 7(3), 1992, pp. 418-422
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