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Results: 1
MODELING OF RADIATION-INDUCED CHARGE TRAPPING AT THE SI-ASTERISK-SIO2INTERFACE OF MOS STRUCTURES
Authors:
TKACHEV YD LYSENKO VS TURCHANIKOV VI
Citation:
Yd. Tkachev et al., MODELING OF RADIATION-INDUCED CHARGE TRAPPING AT THE SI-ASTERISK-SIO2INTERFACE OF MOS STRUCTURES, Physica status solidi. a, Applied research, 140(1), 1993, pp. 163-171
Risultati:
1-1
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