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Results: 6

Authors: GOSS SH GRAZULIS L TOMICH DH EYINK KG WALCK SD HAAS TW THOMAS DR LAMPERT WV
Citation: Sh. Goss et al., MECHANICAL LITHOGRAPHY USING A SINGLE-POINT DIAMOND MACHINING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1439-1445

Authors: TOMICH DH EYINK KG SEAFORD ML TAFERNER WF TU CW LAMPERT WV
Citation: Dh. Tomich et al., ATOMIC-FORCE MICROSCOPY CORRELATED WITH SPECTROSCOPIC ELLIPSOMETRY DURING HOMEPITAXIAL GROWTH ON GAAS(111)B SUBSTRATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1479-1483

Authors: EYINK KG SEAFORD ML HAAS TW TOMICH DH LAMPERT WV WALCK SD SOLOMON JS MITCHEL WC EASTMAN LF
Citation: Kg. Eyink et al., CHARACTERIZATION OF LOW-TEMPERATURE-GROWN ALSB AND GASB BUFFER LAYERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1187-1190

Authors: SEAFORD ML WU W EYINK KG TOMICH DH TUCKER JR EASTMAN LF
Citation: Ml. Seaford et al., SUBNANOMETER ANALYSIS OF MOLECULAR-BEAM EPITAXY-GROWN TERNARY ARSENIDES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1274-1278

Authors: LI NY WONG WS TOMICH DH KAVANAGH KL TU CW
Citation: Ny. Li et al., TENSILE STRAIN RELAXATION IN GANXP1-X (X-LESS-THAN-OR-EQUAL-TO-0.1) GROWN BY CHEMICAL BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2952-2956

Authors: LI NY WONG WS TOMICH DH DONG HK SOLOMON JS GRANT JT TU CW
Citation: Ny. Li et al., GROWTH STUDY OF CHEMICAL BEAM EPITAXY OF GANXP1-X USING NH3 AND TERTIARYBUTYLPHOSPHINE, Journal of crystal growth, 164(1-4), 1996, pp. 180-184
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