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Results:
1-7
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Results: 7
Authors:
TOMOZAWA H
MOMONAGA M
UEMURA T
YAZAWA H
Citation: H. Tomozawa et al., INFLUENCE OF POWDER CHARACTERISTICS OF BULK SUBSTANCE WITH PHARMACEUTICAL PROCESSING, Drug development and industrial pharmacy, 24(9), 1998, pp. 857-861
Authors:
SAWADA M
SAWADA T
YAMAGATA Y
IMAI K
KIMURA H
YOSHINO M
IIZUKA K
TOMOZAWA H
Citation: M. Sawada et al., ELECTRICAL CHARACTERIZATION OF N-GAN SCHOTTKY AND PCVD-SIO2 N-GAN INTERFACES/, Journal of crystal growth, 190, 1998, pp. 706-710
Authors:
KASAI S
JINUSHI K
TOMOZAWA H
HASEGAWA H
Citation: S. Kasai et al., FABRICATION AND CHARACTERIZATION OF GAAS SINGLE-ELECTRON DEVICES HAVING SINGLE AND MULTIPLE DOTS BASED ON SCHOTTKY IN-PLANE-GATE AND WRAP-GATE CONTROL OF 2-DIMENSIONAL ELECTRON-GAS, JPN J A P 1, 36(3B), 1997, pp. 1678-1685
Authors:
TOMOZAWA H
JINUSHI K
OKADA H
HASHIZUME T
HASEGAWA H
Citation: H. Tomozawa et al., DESIGN AND FABRICATION OF GAAS ALGAAS SINGLE-ELECTRON TRANSISTORS BASED ON INPLANE SCHOTTKY GATE CONTROL OF 2DEG/, Physica. B, Condensed matter, 227(1-4), 1996, pp. 112-115
Authors:
SUZUKI S
KODAMA S
TOMOZAWA H
HASEGAWA H
Citation: S. Suzuki et al., A NOVEL INSULATED GATE TECHNOLOGY FOR INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS USING SILICON INTERLAYER BASED PASSIVATION TECHNIQUE, Journal of electronic materials, 25(4), 1996, pp. 649-656
Authors:
MALININ A
TOMOZAWA H
HASHIZUME T
HASEGAWA H
Citation: A. Malinin et al., CHARACTERIZATION OF DEEP LEVELS IN SI-DOPED INXAL1-XAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, JPN J A P 1, 34(2B), 1995, pp. 1138-1142
Authors:
SAITOH T
TOMOZAWA H
NAKAGAWA T
TAKEUCHI H
HASEGAWA H
Citation: T. Saitoh et al., IN-SITU PHOTOLUMINESCENCE AND CAPACITANCE-VOLTAGE CHARACTERIZATION OFINALAS INGAAS REGROWN HETEROINTERFACES BY MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 150(1-4), 1995, pp. 96-100
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1-7
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