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BRUENGER WH
BUSCHBECK H
CEKAN E
EDER S
FEDYNYSHYN TH
HERTLEIN WG
HUDEK P
KOSTIC I
LOESCHNER H
RANGELOW IW
TORKLER M
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Authors:
BRUENGER WH
TORKLER M
BUCHMANN LM
FINKELSTEIN W
Citation: Wh. Bruenger et al., CHEMICALLY AMPLIFIED DEEP-ULTRAVIOLET RESIST FOR POSITIVE TONE ION EXPOSURE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2355-2357
Authors:
BRUENGER WH
BUCHMANN LM
TORKLER M
SINKWITZ S
Citation: Wh. Bruenger et al., HPR-506 PHOTORESIST USED AS A POSITIVE TONE ION RESIST, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3924-3927
Authors:
HAMMEL E
CHALUPKA A
FEGERL J
FISCHER R
LAMMER G
LOSCHNER H
MALEK L
NOWAK R
STENGL G
VONACH H
WOLF P
BRUNGER WH
BUCHMANN LM
TORKLER M
CEKAN E
FALLMANN W
PASCHKE F
STANGL G
THALINGER F
BERRY IL
HARRIOTT LR
FINKELSTEIN W
HILL RW
Citation: E. Hammel et al., EXPERIMENTAL INVESTIGATION OF STOCHASTIC SPACE-CHARGE EFFECTS ON PATTERN RESOLUTION IN ION PROJECTION LITHOGRAPHY SYSTEMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3533-3538
Authors:
BRUNGER WH
BLASCHKE J
TORKLER M
BUCHMANN LM
Citation: Wh. Brunger et al., EDGE ROUGHNESS OF A 200-NM PITCH RESIST PATTERN FABRICATED BY ION PROJECTION LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2404-2408