DUV RESIST UV-II HS APPLIED TO HIGH-RESOLUTION ELECTRON-BEAM LITHOGRAPHY AND TO MASKED ION-BEAM PROXIMITY AND REDUCTION PRINTING

The positive DUV-resist UV II HS from Shipley has been evaluated for 3 0keV e-beam and 75keV H+ ion exposure. Ln the case of electrons the la rge area sensitivity of this chemically amplified resist was 5 mu C/cm (2). 100nm wide lines could be delineated into 1 mu m thick resist. Pa ttern transfer into SiO2 was possible with an etch selectivity SiO2/re sist of > 5. In the case of H+ ion exposure into UV II MS-0.6 resist t he sensitivity was 0.15 mu C/cm(2) which corresponds to 1x10(12) H+ io ns/cm(2). With 8.4 times demagnification of the mask, the ion projecto r in Berlin could expose 80nm wide features into 370nm thick resist wi th an exposure latitude of +/-10%. The 1:1 ion beam proximity printer at IMS, Vienna delineated the smallest mask features (1 mu m) over a m ask to wafer gap of Imm with < 5nm pattern widening for +/-10% overexp osure.