Authors: TRABZON L AWADELKARIM OO WERKING J

Citation: L. Trabzon et al., THE EFFECTS OF INTERLAYER DIELECTRIC DEPOSITION AND PROCESSING ON THERELIABILITY OF N-CHANNEL TRANSISTORS, Solid-state electronics, 42(11), 1998, pp. 2031-2037

Authors: TRABZON L AWADELKARIM OO

Citation: L. Trabzon et Oo. Awadelkarim, DAMAGE TO N-MOSFETS FROM ELECTRICAL STRESS RELATIONSHIP TO PROCESSINGDAMAGE AND IMPACT ON DEVICE RELIABILITY, Microelectronics and reliability, 38(4), 1998, pp. 651-657

Authors: TRABZON L AWADELKARIM OO

Citation: L. Trabzon et Oo. Awadelkarim, ELECTRICAL-STRESS SIMULATION OF PLASMA-DAMAGE TO SUBMICRON METAL-OXIDE-SILICON FIELD-EFFECT TRANSISTORS - COMPARISON BETWEEN DIRECT-CURRENTAND ALTERNATING-CURRENT STRESSES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 692-696

Authors: TRABZON L AWADELKARIM OO WERKING J BERSUKER G CHAN YD

Citation: L. Trabzon et al., COMPARISON BETWEEN DIRECT-CURRENT AND SINUSOIDAL CURRENT STRESSING OFGATE OXIDES AND OXIDE SILICON INTERFACES IN METAL-OXIDE-SILICON FIELD-EFFECT TRANSISTORS/, Journal of applied physics, 81(3), 1997, pp. 1575-1580

Authors: TRABZON L AWADELKARIM OO WERKING J BERSUKER G CHAN YD

Citation: L. Trabzon et al., SINUSOIDAL AC STRESSING OF THIN-GATE OXIDES AND OXIDE SILICON INTERFACES IN 0.5-MU-M N-MOSFETS/, IEEE electron device letters, 17(12), 1996, pp. 569-571