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Results: 1-25/32
Authors:
PLOOG KH
BRANDT O
YANG H
YANG B
TRAMPERT A
Citation: Kh. Ploog et al., NUCLEATION AND GROWTH OF GAN LAYERS ON GAAS, SI, AND SIC SUBSTRATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2229-2236
Authors:
NOTZEL R
RAMSTEINER M
NIU ZC
TRAMPERT A
DAWERITZ L
PLOOG KH
Citation: R. Notzel et al., ATOMIC-HYDROGEN ASSISTED MOLECULAR-BEAM EPITAXY ON PATTERNED GAAS (311)A SUBSTRATES - FORMATION OF HIGHLY UNIFORM QUANTUM-DOT ARRAYS, Journal of electronic materials, 27(1), 1998, pp. 36-40
Authors:
YANG B
BRANDT O
TRAMPERT A
JENICHEN B
PLOOG KH
Citation: B. Yang et al., GROWTH OF CUBIC GAN ON SI(001) BY PLASMA-ASSISTED MBE, Applied surface science, 123, 1998, pp. 1-6
Authors:
LUPKE G
BUSCH O
MEYER C
KURZ H
BRANDT O
YANG H
TRAMPERT A
PLOOG KH
LUCOVSKY G
Citation: G. Lupke et al., INTERFACE ELECTRONIC-TRANSITION OBSERVED BY OPTICAL 2ND-HARMONIC SPECTROSCOPY IN BETA-GAN GAAS(001) HETEROSTRUCTURES/, Physical review. B, Condensed matter, 57(7), 1998, pp. 3722-3725
Authors:
YANG B
TRAMPERT A
BRANDT O
JENICHEN B
PLOOG KH
Citation: B. Yang et al., STRUCTURAL-PROPERTIES OF GAN LAYERS ON SI(001) GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY, Journal of applied physics, 83(7), 1998, pp. 3800-3806
Authors:
TRAMPERT A
KLAUS H
TOURNIE E
Citation: A. Trampert et al., ANISOTROPIC MISFIT DISLOCATION NUCLEATION IN 2-DIMENSIONAL GROWN INASGAAS(001) HETEROSTRUCTURES/, Applied physics letters, 73(8), 1998, pp. 1074-1076
Authors:
NOTZEL R
JAHN U
NIU ZC
TRAMPERT A
FRICKE J
SCHONHERR HP
KURTH T
HEITMANN D
DAWERITZ L
PLOOG KH
Citation: R. Notzel et al., DEVICE-QUALITY SUBMICRON ARRAYS OF STACKED SIDEWALL QUANTUM WIRES ON PATTERNED GAAS (311)A SUBSTRATES, Applied physics letters, 72(16), 1998, pp. 2002-2004
Authors:
TRAMPERT A
BRANDT O
YANG H
PLOOG KH
Citation: A. Trampert et al., HETEROEPITAXY OF CUBIC GAN, Journal de physique. III, 7(12), 1997, pp. 2309-2316
Authors:
BRANDT O
YANG H
MULLHAUSER JR
TRAMPERT A
PLOOG KH
Citation: O. Brandt et al., PROPERTIES OF CUBIC GAN GROWN BY MBE, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 215-221
Authors:
TRAMPERT A
BRANDT O
PLOOG KH
Citation: A. Trampert et al., PHASE-TRANSFORMATIONS AND PHASE-STABILITY IN EPITAXIAL BETA-GAN FILMS, Angewandte Chemie, International Edition in English, 36(19), 1997, pp. 2111-2112
Authors:
BRAUN W
TRAMPERT A
DAWERITZ L
PLOOG KH
Citation: W. Braun et al., NONUNIFORM SEGREGATION OF GA AT ALAS GAAS HETEROINTERFACES/, Physical review. B, Condensed matter, 55(3), 1997, pp. 1689-1695
Authors:
PLOOG KH
BRANDT O
YANG H
TRAMPERT A
Citation: Kh. Ploog et al., MBE GROWTH AND CHARACTERISTICS OF CUBIC GAN, Thin solid films, 306(2), 1997, pp. 231-236
Authors:
EISENHAMMER T
TRAMPERT A
Citation: T. Eisenhammer et A. Trampert, FORMATION OF QUASI-CRYSTALLINE ALCUFE BY PHYSICAL DEPOSITION - PHASE SELECTION VIA NANOCLUSTER NUCLEATION, Physical review letters, 78(2), 1997, pp. 262-265
Authors:
NOTZEL R
MENNIGER J
RAMSTEINER M
TRAMPERT A
SCHONHERR HP
DAWERITZ L
PLOOG KH
Citation: R. Notzel et al., PATTERNED GROWTH ON GAAS (311)A SUBSTRATES, Journal of crystal growth, 175, 1997, pp. 1114-1119
Authors:
BRAUN W
TRAMPERT A
DAWERZITZ L
PLOOG KH
Citation: W. Braun et al., LATERALLY NONUNIFORM GA SEGREGATION AT GAAS ALGAAS INTERFACES DURING MBE GROWTH/, Journal of crystal growth, 175, 1997, pp. 156-161
Authors:
BRANDT O
YANG H
TRAMPERT A
WASSERMEIER M
PLOOG KH
Citation: O. Brandt et al., OPTIMIZED GROWTH-CONDITIONS FOR THE EPITAXIAL NUCLEATION OF BETA-GAN ON GAAS(001) BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 71(4), 1997, pp. 473-475
Authors:
TRAMPERT A
BRANDT O
YANG H
PLOOG KH
Citation: A. Trampert et al., DIRECT OBSERVATION OF THE INITIAL NUCLEATION AND EPITAXIAL-GROWTH OF METASTABLE CUBIC GAN ON (001)GAAS, Applied physics letters, 70(5), 1997, pp. 583-585
Authors:
NOTZEL R
RAMSTEINER M
MENNIGER J
TRAMPERT A
SCHONHERR HP
DAWERITZ L
PLOOG KH
Citation: R. Notzel et al., MICRO-PHOTOLUMINESCENCE STUDY AT ROOM-TEMPERATURE OF SIDEWALL QUANTUMWIRES FORMED ON PATTERNED GAAS (311)A SUBSTRATES BY MOLECULAR-BEAM EPITAXY, JPN J A P 2, 35(3A), 1996, pp. 297-300
Authors:
YANG H
BRANDT O
TRAMPERT A
PLOOG KH
Citation: H. Yang et al., INITIAL-STAGE OF GROWTH OF GAN GAAS(001) IN PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY/, Applied surface science, 104, 1996, pp. 461-467
Authors:
HAUSLER K
EBERL K
NOLL F
TRAMPERT A
Citation: K. Hausler et al., STRONG ALIGNMENT OF SELF-ASSEMBLING INP QUANTUM DOTS, Physical review. B, Condensed matter, 54(7), 1996, pp. 4913-4918
Authors:
NOTZEL R
RAMSTEINER M
MENNIGER J
TRAMPERT A
SCHONHERR HP
DAWERITZ L
PLOOG KH
Citation: R. Notzel et al., PATTERNED GROWTH ON HIGH-INDEX GAAS (N-11) SUBSTRATES - APPLICATION TO SIDEWALL QUANTUM WIRES, Journal of applied physics, 80(7), 1996, pp. 4108-4111
Authors:
KLANN R
BRANDT O
YANG H
GRAHN HT
PLOOG K
TRAMPERT A
Citation: R. Klann et al., PICOSECOND DYNAMICS OF EXCITONS IN CUBIC GAN, Physical review. B, Condensed matter, 52(16), 1995, pp. 11615-11618
Authors:
MAZUELAS A
MAIER M
WAGNER J
TRAMPERT A
FISCHER A
PLOOG KH
Citation: A. Mazuelas et al., HIGH-CARBON DOPING OF GA1-XINXAS (X-APPROXIMATE-TO-0.01) GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 150(1-4), 1995, pp. 251-255
Authors:
TOURNIE E
GRANDJEAN N
TRAMPERT A
MASSIES J
PLOOG KH
Citation: E. Tournie et al., SURFACTANT-MEDIATED MOLECULAR-BEAM EPITAXY OF III-V STRAINED-LAYER HETEROSTRUCTURES, Journal of crystal growth, 150(1-4), 1995, pp. 460-466
Authors:
TRAMPERT A
TOURNIE E
PLOOG KH
Citation: A. Trampert et al., DEFECT CONTROL DURING GROWTH OF HIGHLY MISMATCHED (100) INAS GAAS HETEROSTRUCTURES/, Journal of crystal growth, 146(1-4), 1995, pp. 368-373