Authors: TOWER JP TOBIN SP NORTON PW BOLLONG AB SOCHA A TREGILGAS JH ARD CK ARLINGHAUS HF

Citation: Jp. Tower et al., TRACE COPPER MEASUREMENTS AND ELECTRICAL EFFECTS IN LPE HGCDTE, Journal of electronic materials, 25(8), 1996, pp. 1183-1187

Authors: CHEN MC COLOMBO L DODGE JA TREGILGAS JH

Citation: Mc. Chen et al., THE MINORITY-CARRIER LIFETIME IN DOPED AND UNDOPED P-TYPE HG0.78CD0.22TE LIQUID-PHASE EPITAXY FILMS, Journal of electronic materials, 24(5), 1995, pp. 539-544

Authors: TREGILGAS JH

Citation: Jh. Tregilgas, DEVELOPMENTS IN RECRYSTALLIZED BULK HGCDTE, Progress in crystal growth and characterization of materials, 28(1-2), 1994, pp. 57-83

Authors: TREGILGAS JH WAN CF LIU HY

Citation: Jh. Tregilgas et al., GROWTH AND CHARACTERIZATION OF HOT-WALL EPITAXIAL CDTE ON (111) HGCDTE AND CDZNTE SUBSTRATES, Journal of electronic materials, 22(8), 1993, pp. 821-826