Authors: TRENKLER T VANDERVORST W HELLEMANS L

Citation: T. Trenkler et al., 2-DIMENSIONAL PROFILING IN SILICON USING CONVENTIONAL AND ELECTROCHEMICAL SELECTIVE ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 349-354

Authors: TRENKLER T DEWOLF P VANDERVORST W HELLEMANS L

Citation: T. Trenkler et al., NANOPOTENTIOMETRY - LOCAL POTENTIAL MEASUREMENTS IN COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TRANSISTORS USING ATOMIC-FORCE MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 367-372

Authors: CLARYSSE T CAYMAX M DEWOLF P TRENKLER T VANDERVORST W MCMURRAY JS KIM J WILLIAMS CC CLARK JG NEUBAUER G

Citation: T. Clarysse et al., EPITAXIAL STAIRCASE STRUCTURE FOR THE CALIBRATION OF ELECTRICAL CHARACTERIZATION TECHNIQUES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 394-400

Authors: TRENKLER T JEANNERET JB

Citation: T. Trenkler et Jb. Jeanneret, THE PRINCIPLES OF 2-STAGE BETATRON AND MOMENTUM COLLIMATION IN CIRCULAR ACCELERATORS, Particle accelerators, 50(4), 1995, pp. 287-311

Authors: LI L BENDER H TRENKLER T MERTENS PW MEURIS M VANDERVORST W HEYNS MM

Citation: L. Li et al., SURFACE PASSIVATION AND MICROROUGHNESS OF (100)SILICON ETCHED IN AQUEOUS HYDROGEN HALIDE (HF, HCL, HBR, HI) SOLUTIONS, Journal of applied physics, 77(3), 1995, pp. 1323-1325