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Results: 1-10 |
Results: 10
STACKING MISMATCH BOUNDARIES IN GAN - IMPLICATIONS FOR SUBSTRATE SELECTION
Authors: SMITH DJ TSEN SCY SVERDLOV BN MARTIN G MORKOC H
Citation: Dj. Smith et al., STACKING MISMATCH BOUNDARIES IN GAN - IMPLICATIONS FOR SUBSTRATE SELECTION, Solid-state electronics, 41(2), 1997, pp. 349-352
REFLECTIVITY DIFFERENCE SPECTROSCOPY STUDY OF THIN-FILM ZNSE GROWN ONGAAS BY MOLECULAR-BEAM EPITAXY
Authors: KIM CC CHEN YP DARASELIA M SIVANANTHAN S TSEN SCY SMITH DJ
Citation: Cc. Kim et al., REFLECTIVITY DIFFERENCE SPECTROSCOPY STUDY OF THIN-FILM ZNSE GROWN ONGAAS BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 175, 1997, pp. 328-333
MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNSE ON GAAS SUBSTRATES - INFLUENCE OF PRECURSORS ON INTERFACE QUALITY
Authors: KIM CC CHEN YP SIVANANTHAN S TSEN SCY SMITH DJ
Citation: Cc. Kim et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNSE ON GAAS SUBSTRATES - INFLUENCE OF PRECURSORS ON INTERFACE QUALITY, Journal of crystal growth, 175, 1997, pp. 613-618
MICROSTRUCTURAL STUDY OF MG-DOPED P-TYPE GAN - CORRELATION BETWEEN HIGH-RESOLUTION ELECTRON-MICROSCOPY AND RAMAN-SPECTROSCOPY
Authors: TSEN SCY SMITH DJ TSEN KT KIM W MORKOC H
Citation: Scy. Tsen et al., MICROSTRUCTURAL STUDY OF MG-DOPED P-TYPE GAN - CORRELATION BETWEEN HIGH-RESOLUTION ELECTRON-MICROSCOPY AND RAMAN-SPECTROSCOPY, Journal of applied physics, 82(12), 1997, pp. 6008-6011
OPTICAL-PROPERTIES OF GAN GROWN ON ZNO BY REACTIVE MOLECULAR-BEAM EPITAXY
Authors: HAMDANI F BOTCHKAREV A KIM W MORKOC H YEADON M GIBSON JM TSEN SCY SMITH DJ EVANS K LITTON CW MITCHEL WC HEMENGER P
Citation: F. Hamdani et al., OPTICAL-PROPERTIES OF GAN GROWN ON ZNO BY REACTIVE MOLECULAR-BEAM EPITAXY, Applied physics letters, 70(4), 1997, pp. 467-469
GROWTH OF HIGH-QUALITY CDTE ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
Authors: ALMEIDA LA CHEN YP FAURIE JP SIVANANTHAN S SMITH DJ TSEN SCY
Citation: La. Almeida et al., GROWTH OF HIGH-QUALITY CDTE ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Journal of electronic materials, 25(8), 1996, pp. 1402-1405
HETEROEPITAXIAL CDTE(111) GROWN BY MBE ON NOMINALLY FLAT AND MISORIENTED SI(001) SUBSTRATES - CHARACTERIZATION BY ELECTRON-MICROSCOPY AND OPTICAL METHODS
Authors: TSEN SCY SMITH DJ HUTCHINS JW SKROMME BJ CHEN YP SIVANANTHAN S
Citation: Scy. Tsen et al., HETEROEPITAXIAL CDTE(111) GROWN BY MBE ON NOMINALLY FLAT AND MISORIENTED SI(001) SUBSTRATES - CHARACTERIZATION BY ELECTRON-MICROSCOPY AND OPTICAL METHODS, Journal of crystal growth, 159(1-4), 1996, pp. 58-63
GROWTH AND CHARACTERIZATION OF HETEROEPITAXIAL CDTE AND ZNTE ON GE(001) BUFFER LAYERS
Authors: SMITH DJ TSEN SCY CHEN YP SIVANANTHAN S POSTHILL JB
Citation: Dj. Smith et al., GROWTH AND CHARACTERIZATION OF HETEROEPITAXIAL CDTE AND ZNTE ON GE(001) BUFFER LAYERS, Applied physics letters, 69(14), 1996, pp. 2086-2088
STRUCTURAL-PROPERTIES OF GAN FILMS GROWN ON SAPPHIRE BY MOLECULAR-BEAM EPITAXY
Authors: ZHU Q BOTCHKAREV A KIM W AKTAS O SALVADOR A SVERDLOV B MORKOC H TSEN SCY SMITH DJ
Citation: Q. Zhu et al., STRUCTURAL-PROPERTIES OF GAN FILMS GROWN ON SAPPHIRE BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 68(8), 1996, pp. 1141-1143
MICROSTRUCTURE OF HETEROEPITAXIAL CDTE GROWN ON MISORIENTED SI(001) SUBSTRATES
Authors: SMITH DJ TSEN SCY CHEN YP FAURIE JP SIVANANTHAN S
Citation: Dj. Smith et al., MICROSTRUCTURE OF HETEROEPITAXIAL CDTE GROWN ON MISORIENTED SI(001) SUBSTRATES, Applied physics letters, 67(11), 1995, pp. 1591-1593
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