Authors: GRIGOROPOULOS S GOGOLIDES E TSEREPI AD NASSIOPOULOS AG

Citation: S. Grigoropoulos et al., HIGHLY ANISOTROPIC SILICON REACTIVE ION ETCHING FOR NANOFABRICATION USING MIXTURES OF SF6 CHF3 GASES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(3), 1997, pp. 640-645

Authors: TSEREPI AD DEROUARD J BOOTH JP SADEGHI N

Citation: Ad. Tserepi et al., CF2 KINETICS AND RELATED MECHANISMS IN THE PRESENCE OF POLYMERS IN FLUOROCARBON PLASMAS, Journal of applied physics, 81(5), 1997, pp. 2124-2130

Authors: TSEREPI AD WURZBERG E MILLER TA

Citation: Ad. Tserepi et al., 2-PHOTON-EXCITED STIMULATED-EMISSION FROM ATOMIC OXYGEN IN RF PLASMAS- DETECTION AND ESTIMATION OF ITS THRESHOLD, Chemical physics letters, 265(3-5), 1997, pp. 297-302

Authors: TSEREPI AD MILLER TA

Citation: Ad. Tserepi et Ta. Miller, SPATIALLY AND TEMPORALLY RESOLVED ABSOLUTE O-ATOM CONCENTRATIONS IN ETCHING PLASMAS, Journal of applied physics, 77(2), 1995, pp. 505-511

Authors: TSEREPI AD MILLER TA

Citation: Ad. Tserepi et Ta. Miller, 2-PHOTON ABSORPTION LASER-INDUCED FLUORESCENCE OF H-ATOMS - A PROBE FOR HETEROGENEOUS PROCESSES IN HYDROGEN PLASMAS, Journal of applied physics, 75(11), 1994, pp. 7231-7236