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Results: 1-9 |
Results: 9
PREVALENCE OF GALACTORRHEA IN NORMAL WOMEN IN CENTRAL ANATOLIA
Authors: SAHIN Y TURAN R KELESTIMUR F
Citation: Y. Sahin et al., PREVALENCE OF GALACTORRHEA IN NORMAL WOMEN IN CENTRAL ANATOLIA, Human reproduction (Oxford. Print), 13, 1998, pp. 173-173
ELECTRICAL AND STRUCTURAL CHARACTERIZATION OF PTSI P-SI1-XGEX LOW SCHOTTKY-BARRIER JUNCTIONS PREPARED BY COSPUTTERING/
Authors: NUR O WILLANDER M TURAN R SARDELA MR RADAMSON HH HANSSON GV
Citation: O. Nur et al., ELECTRICAL AND STRUCTURAL CHARACTERIZATION OF PTSI P-SI1-XGEX LOW SCHOTTKY-BARRIER JUNCTIONS PREPARED BY COSPUTTERING/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(2), 1997, pp. 241-246
LOW SCHOTTKY-BARRIER JUNCTIONS ON STRAINED P-SI1-XGEX FOR INFRARED DETECTION
Authors: NUR O WILLANDER M TURAN R SARDELA MR HANSSON GV
Citation: O. Nur et al., LOW SCHOTTKY-BARRIER JUNCTIONS ON STRAINED P-SI1-XGEX FOR INFRARED DETECTION, Physica scripta. T, T69, 1997, pp. 250-254
FABRICATION AND CHARACTERIZATION OF MOS DEVICES ON 3C-SIC FILMS GROWNBY REACTIVE MAGNETRON SPUTTERING ON SI(111) SUBSTRATES
Authors: WAHAB Q TURAN R HULTMAN L WILLANDER M SUNDGREN JE
Citation: Q. Wahab et al., FABRICATION AND CHARACTERIZATION OF MOS DEVICES ON 3C-SIC FILMS GROWNBY REACTIVE MAGNETRON SPUTTERING ON SI(111) SUBSTRATES, Thin solid films, 287(1-2), 1996, pp. 252-257
MAPPING ELECTRICALLY ACTIVE DOPANT PROFILES BY FIELD-EMISSION SCANNING ELECTRON-MICROSCOPY
Authors: TURAN R PEROVIC DD HOUGHTON DC
Citation: R. Turan et al., MAPPING ELECTRICALLY ACTIVE DOPANT PROFILES BY FIELD-EMISSION SCANNING ELECTRON-MICROSCOPY, Applied physics letters, 69(11), 1996, pp. 1593-1595
METAL-SEMICONDUCTOR JUNCTIONS ON P-TYPE STRAINED SI1-XGEX LAYERS
Authors: NUR O WILLANDER M TURAN R SARDELA MR HANSSON GV
Citation: O. Nur et al., METAL-SEMICONDUCTOR JUNCTIONS ON P-TYPE STRAINED SI1-XGEX LAYERS, Applied physics letters, 68(8), 1996, pp. 1084-1086
SCHOTTKY-BARRIER HEIGHTS OF IR P-SI AND IR/STRAINED P-SI1-XGEX JUNCTIONS/
Authors: NUR O SARDELA MR WILLANDER M TURAN R
Citation: O. Nur et al., SCHOTTKY-BARRIER HEIGHTS OF IR P-SI AND IR/STRAINED P-SI1-XGEX JUNCTIONS/, Semiconductor science and technology, 10(4), 1995, pp. 551-555
STRAIN DETERMINATION AND MICROSTRUCTURAL CHARACTERIZATION OF 50-KEV SN-ION-IMPLANTED SI(001)
Authors: SARDELA MR TURAN R WILLANDER M HANSSON GV HULTMAN L
Citation: Mr. Sardela et al., STRAIN DETERMINATION AND MICROSTRUCTURAL CHARACTERIZATION OF 50-KEV SN-ION-IMPLANTED SI(001), Journal of applied physics, 77(4), 1995, pp. 1411-1420
SCHOTTKY-BARRIER HEIGHT OF CRSI2-SI JUNCTIONS
Authors: TURAN R AKMAN N
Citation: R. Turan et N. Akman, SCHOTTKY-BARRIER HEIGHT OF CRSI2-SI JUNCTIONS, Semiconductor science and technology, 8(11), 1993, pp. 1999-2002
Risultati: 1-9 |