Authors:
KHANH NQ
TUTTO P
BUIU O
JAROLI EN
BIRO LP
MANUABA A
GYULAI J
Citation: Nq. Khanh et al., CHARGE-CARRIER LIFETIME MODIFICATION IN SILICON BY HIGH-ENERGY H-IMPLANTATION( OR HE+ ION), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 388-392
Citation: Lp. Biro et al., INFLUENCE OF SAMPLE THICKNESS ON CARRIER LIFETIME MODIFICATION INDUCED BY 4 MEV PROTON IMPLANTATION IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 173-176
Citation: Ts. Horanyi et al., IDENTIFICATION POSSIBILITY OF METALLIC IMPURITIES IN P-TYPE SILICON BY LIFETIME MEASUREMENT, Journal of the Electrochemical Society, 143(1), 1996, pp. 216-220