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Results:
1-11
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Results: 11
Authors:
Tackeuchi, A
Nakata, Y
Sasou, R
Mase, K
Kuroda, T
Yokoyama, N
Citation: A. Tackeuchi et al., Observation of interdot tunneling process of spin-polarized electrons, PHYSICA E, 10(1-3), 2001, pp. 32-35
Authors:
Kuroda, T
Sasou, R
Tackeuchi, A
Sato, H
Horio, N
Funaoka, C
Citation: T. Kuroda et al., Time-resolved photoluminescence study of InGaN MQW with a p-contact layer, PHYS ST S-B, 228(1), 2001, pp. 125-128
Authors:
Neogi, A
Yoshida, H
Mozume, T
Georgiev, N
Akiyama, T
Tackeuchi, A
Wada, O
Citation: A. Neogi et al., Ultrafast all-optical modulation by near-infrared intersubband transition in n-doped InGaAs/AlAsSb quantum wells, OPT QUANT E, 33(7-10), 2001, pp. 975-983
Authors:
Chichibu, SF
Sugiyama, M
Kuroda, T
Tackeuchi, A
Kitamura, T
Nakanishi, H
Sota, T
DenBaars, SP
Nakamura, S
Ishida, Y
Okumura, H
Citation: Sf. Chichibu et al., Band gap bowing and exciton localization in strained cubic InxGa1-xN filmsgrown on 3C-SiC (001) by rf molecular-beam epitaxy, APPL PHYS L, 79(22), 2001, pp. 3600-3602
Authors:
Tackeuchi, A
Kuroda, T
Mase, K
Nakata, Y
Yokoyama, N
Citation: A. Tackeuchi et al., Dynamics of carrier tunneling between vertically aligned double quantum dots, PHYS REV B, 62(3), 2000, pp. 1568-1571
Authors:
Shikanai, A
Deguchi, T
Sota, T
Kuroda, T
Tackeuchi, A
Chichibu, S
Nakamura, S
Citation: A. Shikanai et al., A pump and probe study of photoinduced internal field screening dynamics in an AlGaN/GaN single-quantum-well structure, APPL PHYS L, 76(4), 2000, pp. 454-456
Authors:
Kuroda, T
Tackeuchi, A
Sota, T
Citation: T. Kuroda et al., Luminescence energy shift and carrier lifetime change dependence on carrier density in In0.12Ga0.88N/In0.03Ga0.97N quantum wells, APPL PHYS L, 76(25), 2000, pp. 3753-3755
Authors:
Tackeuchi, A
Kuroda, T
Muto, S
Nishikawa, Y
Wada, O
Citation: A. Tackeuchi et al., Electron spin-relaxation dynamics in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells, JPN J A P 1, 38(8), 1999, pp. 4680-4687
Authors:
Terauchi, R
Ohno, Y
Adachi, T
Sato, A
Matsukura, F
Tackeuchi, A
Ohno, H
Citation: R. Terauchi et al., Carrier mobility dependence of electron spin relaxation in GaAs quantum wells, JPN J A P 1, 38(4B), 1999, pp. 2549-2551
Authors:
Nishimura, T
Wang, XL
Ogura, M
Tackeuchi, A
Wada, O
Citation: T. Nishimura et al., Electron spin relaxation in GaAs/AlGaAs quantum wires analyzed by transient photoluminescence, JPN J A P 2, 38(8B), 1999, pp. L941-L944
Authors:
Tackeuchi, A
Kuroda, T
Muto, S
Wada, O
Citation: A. Tackeuchi et al., Picosecond electron-spin relaxation in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells, PHYSICA B, 272(1-4), 1999, pp. 318-323
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