Authors: Seol, KS Watanabe, T Fujimaki, M Kato, H Ohki, Y Takiyama, M

Citation: Ks. Seol et al., Time-resolved photoluminescence study of hydrogenated amorphous silicon nitride, PHYS REV B, 62(3), 2000, pp. 1532-1535

Authors: Kato, H Seol, KS Fujimaki, M Toyoda, T Ohki, Y Takiyama, M

Citation: H. Kato et al., Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low-pressure chemical vapor deposition, JPN J A P 1, 38(12A), 1999, pp. 6791-6796

Authors: Tanaka, K Tsuge, A Takiyama, M Shimizu, R

Citation: K. Tanaka et al., Analysis of the transition layer in silicon nitride films deposited by a low-pressure chemical vapour deposition, SURF INT AN, 27(7), 1999, pp. 638-643

Authors: Seol, KS Futami, T Watanabe, T Ohki, Y Takiyama, M

Citation: Ks. Seol et al., Effects of ion implantation and thermal annealing on the photoluminescencein amorphous silicon nitride, J APPL PHYS, 85(9), 1999, pp. 6746-6750