Authors:
Kato, H
Seol, KS
Fujimaki, M
Toyoda, T
Ohki, Y
Takiyama, M
Citation: H. Kato et al., Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low-pressure chemical vapor deposition, JPN J A P 1, 38(12A), 1999, pp. 6791-6796
Authors:
Tanaka, K
Tsuge, A
Takiyama, M
Shimizu, R
Citation: K. Tanaka et al., Analysis of the transition layer in silicon nitride films deposited by a low-pressure chemical vapour deposition, SURF INT AN, 27(7), 1999, pp. 638-643
Authors:
Seol, KS
Futami, T
Watanabe, T
Ohki, Y
Takiyama, M
Citation: Ks. Seol et al., Effects of ion implantation and thermal annealing on the photoluminescencein amorphous silicon nitride, J APPL PHYS, 85(9), 1999, pp. 6746-6750