Authors:
Aihara, K
Takeno, H
Hayamizu, Y
Tamatsuka, M
Masui, T
Citation: K. Aihara et al., Enhanced nucleation of oxide precipitates during Czochralski silicon crystal growth with nitrogen doping, J APPL PHYS, 88(6), 2000, pp. 3705-3707
Citation: A. Romanowski et al., Simulation of void and oxygen precipitation processes during high temperature annealing of silicon wafers, J APPL PHYS, 85(9), 1999, pp. 6408-6414