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Results:
1-7
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Results: 7
Authors:
Tampo, H
Asahi, H
Imanishi, Y
Hiroki, M
Ohnishi, K
Yamada, K
Asami, K
Gonda, S
Citation: H. Tampo et al., Growth of high-quality polycrystalline GaN on glass substrate by gas source molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 442-446
Authors:
Yamada, K
Asahi, H
Tampo, H
Imanishi, Y
Ohnishi, K
Asami, K
Citation: K. Yamada et al., Strong photoluminescence emission from polycrystalline GaN layers grown onW, Mo, Ta, and Nb metal substrates, APPL PHYS L, 78(19), 2001, pp. 2849-2851
Authors:
Asahi, H
Tampo, H
Hiroki, H
Asami, K
Gonda, S
Citation: H. Asahi et al., Gas source MBE growth of GaN-related novel semiconductors, MAT SCI E B, 75(2-3), 2000, pp. 199-203
Authors:
Hiroki, M
Asahi, H
Tampo, H
Asami, K
Gonda, S
Citation: M. Hiroki et al., Improved properties of polycrystalline GaN grown on silica glass substrate, J CRYST GR, 209(2-3), 2000, pp. 387-391
Authors:
Tampo, H
Asahi, H
Hiroki, M
Asami, K
Gonda, S
Citation: H. Tampo et al., Strong photoluminescence emission from GaN on SrTiO3, PHYS ST S-B, 216(1), 1999, pp. 113-116
Authors:
Kuroiwa, R
Asahi, H
Iwata, K
Tampo, H
Asami, K
Gonda, S
Citation: R. Kuroiwa et al., Observation of quantum-dot-like properties in the phase-separated GaN-richGaNP, PHYS ST S-B, 216(1), 1999, pp. 461-464
Authors:
Asahi, H
Iwata, K
Tampo, H
Kuroiwa, R
Hiroki, M
Asami, K
Nakamura, S
Gonda, S
Citation: H. Asahi et al., Very strong photoluminescence emission from GaN grown on amorphous silica substrate by gas source MBE, J CRYST GR, 202, 1999, pp. 371-375
Risultati:
1-7
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