Authors:
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Simin, G
Tamulaitis, G
Srinivasan, R
Yang, J
Khan, MA
Shur, MS
Gaska, R
Citation: V. Adivarahan et al., Indium-silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors, APPL PHYS L, 79(12), 2001, pp. 1903-1905
Authors:
Zukauskas, A
Jursenas, S
Kurilcik, G
Tamulaitis, G
Shur, MS
Gaska, R
Yang, JW
Khan, MA
Citation: A. Zukauskas et al., Finite-temperature band gap renormalization in highly photoexcited GaN epilayers, PHYS ST S-B, 216(1), 1999, pp. 501-504
Authors:
Jursenas, S
Tamulaitis, G
Kurilcik, G
Zukauskas, A
Citation: S. Jursenas et al., Nonradiative capture of hot photoelectrons by multiphonon emission in highly excited polar semiconductors, PHYS SCR, T79, 1999, pp. 187-192
Authors:
Tamulaitis, G
Gulbinas, V
Undzenas, A
Valkunas, L
Citation: G. Tamulaitis et al., Fluorescence properties of sensitized photoconducting films of poly-N-epoxypropylcarbazole, J LUMINESC, 82(4), 1999, pp. 327-332
Authors:
Tamulaitis, G
Zukauskas, A
Yang, JW
Khan, MA
Shur, MS
Gaska, R
Citation: G. Tamulaitis et al., Heating of photogenerated electrons and holes in highly excited GaN epilayers, APPL PHYS L, 75(15), 1999, pp. 2277-2279