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Results: 1-13 |
Results: 13
Indium-silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors
Authors: Adivarahan, V Simin, G Tamulaitis, G Srinivasan, R Yang, J Khan, MA Shur, MS Gaska, R
Citation: V. Adivarahan et al., Indium-silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors, APPL PHYS L, 79(12), 2001, pp. 1903-1905
Optical nonlinearities of glass doped with PbS nanocrystals
Authors: Tamulaitis, G Gulbinas, V Kodis, G Dementjev, A Valkunas, L Motchalov, I Raaben, H
Citation: G. Tamulaitis et al., Optical nonlinearities of glass doped with PbS nanocrystals, J APPL PHYS, 88(1), 2000, pp. 178-182
Optical bandgap formation in AlInGaN alloys
Authors: Tamulaitis, G Kazlauskas, K Jursenas, S Zukauskas, A Khan, MA Yang, JW Zhang, J Simin, G Shur, MS Gaska, R
Citation: G. Tamulaitis et al., Optical bandgap formation in AlInGaN alloys, APPL PHYS L, 77(14), 2000, pp. 2136-2138
Lattice and energy band engineering in AlInGaN/GaN heterostructures
Authors: Khan, MA Yang, JW Simin, G Gaska, R Shur, MS zur Loye, HC Tamulaitis, G Zukauskas, A Smith, DJ Chandrasekhar, D Bicknell-Tassius, R
Citation: Ma. Khan et al., Lattice and energy band engineering in AlInGaN/GaN heterostructures, APPL PHYS L, 76(9), 2000, pp. 1161-1163
Dynamic behavior of hot-electron-hole plasma in highly excited GaN epilayers
Authors: Jursenas, S Kurilcik, G Tamulaitis, G Zukauskas, A Gaska, R Shur, MS Khan, MA Yang, JW
Citation: S. Jursenas et al., Dynamic behavior of hot-electron-hole plasma in highly excited GaN epilayers, APPL PHYS L, 76(17), 2000, pp. 2388-2390
Hot electrons and holes in highly photoexcited GaN epilayers
Authors: Zukauskas, A Tamulaitis, G Gaska, R Shur, MS Khan, MA Yang, JW
Citation: A. Zukauskas et al., Hot electrons and holes in highly photoexcited GaN epilayers, PHYS ST S-B, 216(1), 1999, pp. 495-499
Finite-temperature band gap renormalization in highly photoexcited GaN epilayers
Authors: Zukauskas, A Jursenas, S Kurilcik, G Tamulaitis, G Shur, MS Gaska, R Yang, JW Khan, MA
Citation: A. Zukauskas et al., Finite-temperature band gap renormalization in highly photoexcited GaN epilayers, PHYS ST S-B, 216(1), 1999, pp. 501-504
Nonradiative capture of hot photoelectrons by multiphonon emission in highly excited polar semiconductors
Authors: Jursenas, S Tamulaitis, G Kurilcik, G Zukauskas, A
Citation: S. Jursenas et al., Nonradiative capture of hot photoelectrons by multiphonon emission in highly excited polar semiconductors, PHYS SCR, T79, 1999, pp. 187-192
The AlGaAs light emitting particle detector
Authors: Pozela, J Pozela, K Silenas, A Juciene, V Dapkus, L Jasutis, V Tamulaitis, G Zukauskas, A Bendorius, RA
Citation: J. Pozela et al., The AlGaAs light emitting particle detector, NUCL INST A, 434(1), 1999, pp. 169-172
Energy band/lattice mismatch engineering in quaternary AlInGaN/GaN heterostructure
Authors: Khan, MA Yang, JW Simin, G zur Loye, H Bicknell-Tassius, R Gaska, R Shur, MS Tamulaitis, G Zukauskas, A
Citation: Ma. Khan et al., Energy band/lattice mismatch engineering in quaternary AlInGaN/GaN heterostructure, PHYS ST S-A, 176(1), 1999, pp. 227-230
Fluorescence properties of sensitized photoconducting films of poly-N-epoxypropylcarbazole
Authors: Tamulaitis, G Gulbinas, V Undzenas, A Valkunas, L
Citation: G. Tamulaitis et al., Fluorescence properties of sensitized photoconducting films of poly-N-epoxypropylcarbazole, J LUMINESC, 82(4), 1999, pp. 327-332
Lead tungstate PbWO4 crystals for high energy physics
Authors: Burachas, S Bondar, V Borodenko, Y Katrunov, K Martinov, V Nagornaya, L Ryzhikov, V Tamulaitis, G Gutbrod, H Manko, V
Citation: S. Burachas et al., Lead tungstate PbWO4 crystals for high energy physics, J CRYST GR, 199, 1999, pp. 881-884
Heating of photogenerated electrons and holes in highly excited GaN epilayers
Authors: Tamulaitis, G Zukauskas, A Yang, JW Khan, MA Shur, MS Gaska, R
Citation: G. Tamulaitis et al., Heating of photogenerated electrons and holes in highly excited GaN epilayers, APPL PHYS L, 75(15), 1999, pp. 2277-2279
Risultati: 1-13 |