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Results:
1-7
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Results: 7
Authors:
Tarui, Y
Tsuchiko, A
Utsumi, H
Kasahara, M
Itoh, Y
Citation: Y. Tarui et al., Ku-band 20-W GaAsPHEMT high-power amplifiers using power splitting and combining circuits with asymmetric structure, ELEC C JP 2, 84(1), 2001, pp. 56-65
Authors:
Sakamaki, K
Migita, S
Xiong, SB
Ota, H
Sakai, S
Tarui, Y
Citation: K. Sakamaki et al., Fabrication and electrical characteristics of a trench-type metal-ferroelectric-metal-insulator-semiconductor field effect transistor, JPN J A P 1, 40(9B), 2001, pp. 5605-5609
Authors:
Tarui, Y
Fujii, K
Itoh, Y
Citation: Y. Tarui et al., Calculation of loop oscillations of microwave high-power amplifiers with several closed loop circuits and split-cell matching methods for high stability, ELEC C JP 2, 83(8), 2000, pp. 33-42
Authors:
Migita, S
Xiong, SB
Sakamaki, K
Ota, H
Tarui, Y
Sakai, S
Citation: S. Migita et al., Epitaxial growth of Bi4Ti3O12/CeO2/Ce0.12Zr0.88O2 and Bi4Ti3O12/SrTiO3/Ce0.12Zr0.88O2 thin films on Si and its application to metal-ferroelectric-insulator-semiconductor diodes, JPN J A P 1, 39(9B), 2000, pp. 5505-5511
Authors:
Tarui, Y
Nakahara, K
Itoh, Y
Matsunaga, M
Citation: Y. Tarui et al., A method for dividing ratio equalization of power dividing combining circuits used in a power amplifier, ELEC C JP 2, 82(7), 1999, pp. 16-22
Authors:
Migita, S
Uesugi, T
Kishi, H
Hirai, T
Sakai, S
Tarui, Y
Citation: S. Migita et al., Growth style of Bi4Ti3O12 thin films on CeO2/Ce0.12Zr0.88O2 buffered Si substrates, JPN J A P 1, 38(9B), 1999, pp. 5411-5416
Authors:
Sakamaki, K
Hirai, T
Uesugi, T
Kishi, H
Tarui, Y
Citation: K. Sakamaki et al., Characteristics of a metal/ferroelectric/insulator/semiconductor structureusing an ultrathin nitrided oxide film as the buffer layer, JPN J A P 2, 38(4B), 1999, pp. L451-L453
Risultati:
1-7
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