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Results:
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Results: 3
Annealing behavior of luminescence from erbium-implanted GaN films
Authors:
Zavada, JM Ellis, CJ Lin, JY Jiang, HX Seo, JT Hommerich, U Thaik, M Wilson, RG Grudowski, PA Dupuis, RD
Citation:
Jm. Zavada et al., Annealing behavior of luminescence from erbium-implanted GaN films, MAT SCI E B, 81(1-3), 2001, pp. 127-131
Near infrared (1.54 mu m) luminescence properties of erbium doped gallium nitride
Authors:
Hommerich, U Seo, JT Thaik, M Abernathy, CR MacKenzie, JD Zavada, JM
Citation:
U. Hommerich et al., Near infrared (1.54 mu m) luminescence properties of erbium doped gallium nitride, J ALLOY COM, 303, 2000, pp. 331-335
Luminescence characteristics of Er-doped GaN semiconductor thin films
Authors:
Zavada, JM Thaik, M Hommerich, U MacKenzie, JD Abernathy, CR Pearton, SJ Wilson, RG
Citation:
Jm. Zavada et al., Luminescence characteristics of Er-doped GaN semiconductor thin films, J ALLOY COM, 300, 2000, pp. 207-213
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