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Results: 1-9 |
Results: 9
Energy transfer between shallow centers and rare-earth ion cores: Er3+ ionin silicon
Authors: Gregorkiewicz, T Thao, DTX Langer, JM Bekman, HHPT Bresler, MS Michel, J Kimerling, LC
Citation: T. Gregorkiewicz et al., Energy transfer between shallow centers and rare-earth ion cores: Er3+ ionin silicon, PHYS REV B, 61(8), 2000, pp. 5369-5375
Tracking recombination processes in Si : Er with a free-electron laser
Authors: Gregorkiewicz, T Thao, DTX Langer, JM Bekman, HHPT
Citation: T. Gregorkiewicz et al., Tracking recombination processes in Si : Er with a free-electron laser, J LUMINESC, 87-9, 2000, pp. 96-100
Photoluminescence of erbium-doped silicon: Excitation power and temperature dependence
Authors: Thao, DTX Ammerlaan, CAJ Gregorkiewicz, T
Citation: Dtx. Thao et al., Photoluminescence of erbium-doped silicon: Excitation power and temperature dependence, J APPL PHYS, 88(3), 2000, pp. 1443-1455
Photoluminescence of erbium-doped silicon: excitation power dependence
Authors: Ammerlaan, CAJ Thao, DTX Gregorkiewicz, T Sobolev, NA
Citation: Caj. Ammerlaan et al., Photoluminescence of erbium-doped silicon: excitation power dependence, SEMICONDUCT, 33(6), 1999, pp. 598-602
Spectroscopic probing of defect-related energy storage in silicon doped with erbium
Authors: Thao, DTX Gregorkiewicz, T Langer, JM
Citation: Dtx. Thao et al., Spectroscopic probing of defect-related energy storage in silicon doped with erbium, PHYSICA B, 274, 1999, pp. 326-329
The photoluminescence mechanism of erbium in silicon: intensity dependenceon excitation power and temperature
Authors: Thao, DTX Ammerlaan, CAJ Gregorkiewicz, T
Citation: Dtx. Thao et al., The photoluminescence mechanism of erbium in silicon: intensity dependenceon excitation power and temperature, PHYSICA B, 274, 1999, pp. 338-341
Direct spectral probing of energy storage in Si : Er by a free-electron laser
Authors: Gregorkiewicz, T Thao, DTX Langer, JM
Citation: T. Gregorkiewicz et al., Direct spectral probing of energy storage in Si : Er by a free-electron laser, APPL PHYS L, 75(26), 1999, pp. 4121-4123
Role of shallow bound states in emission processes of rare-earth doped semiconductors
Authors: Gregorkiewicz, T Thao, DTX Langer, JM
Citation: T. Gregorkiewicz et al., Role of shallow bound states in emission processes of rare-earth doped semiconductors, PHYS ST S-B, 210(2), 1998, pp. 737-745
Excitation mechanism of Er in Si studied with a free-electron laser
Authors: Gregorkiewicz, T Thao, DTX Tsimperidis, I Bekman, HHPT Langerak, CJGM Michel, J Kimerling, LC
Citation: T. Gregorkiewicz et al., Excitation mechanism of Er in Si studied with a free-electron laser, J LUMINESC, 80(1-4), 1998, pp. 291-295
Risultati: 1-9 |