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Results: 1-9 |
Results: 9
Special issue: Practical applications of coupled process models in subsurface environments - Preface
Authors: Ibaraki, M Therrien, R
Citation: M. Ibaraki et R. Therrien, Special issue: Practical applications of coupled process models in subsurface environments - Preface, J CONTAM HY, 52(1-4), 2001, pp. 1-2
Gas production and migration in landfills and geological materials
Authors: Nastev, M Therrien, R Lefebvre, R Gelinas, P
Citation: M. Nastev et al., Gas production and migration in landfills and geological materials, J CONTAM HY, 52(1-4), 2001, pp. 187-211
Effects of dissipation on a superconducting single electron transistor - art. no. 017002
Authors: Kycia, JB Chen, J Therrien, R Kurdak, C Campman, KL Gossard, AC Clarke, J
Citation: Jb. Kycia et al., Effects of dissipation on a superconducting single electron transistor - art. no. 017002, PHYS REV L, 8701(1), 2001, pp. 7002-NIL_116
Well bore boundary conditions for variably saturated flow modeling
Authors: Therrien, R Sudicky, EA
Citation: R. Therrien et Ea. Sudicky, Well bore boundary conditions for variably saturated flow modeling, ADV WATER R, 24(2), 2000, pp. 195-201
Charge redistribution at GaN-Ga2O3 interfaces: a microscopic mechanism forlow defect density interfaces in remote-plasma-processed MOS devices prepared on polar GaN faces
Authors: Therrien, R Lucovsky, G Davis, R
Citation: R. Therrien et al., Charge redistribution at GaN-Ga2O3 interfaces: a microscopic mechanism forlow defect density interfaces in remote-plasma-processed MOS devices prepared on polar GaN faces, APPL SURF S, 166(1-4), 2000, pp. 513-519
Decision analysis for leachate control at a fractured rock landfill
Authors: Lepage, N Hamel, P Lefebvre, R Therrien, R Blais, C
Citation: N. Lepage et al., Decision analysis for leachate control at a fractured rock landfill, GR WATER M, 19(3), 1999, pp. 157-170
Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism forlow defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces
Authors: Therrien, R Niimi, H Gehrke, T Lucovsky, G Davis, R
Citation: R. Therrien et al., Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism forlow defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces, MICROEL ENG, 48(1-4), 1999, pp. 303-306
Sources and drains: Major controls of hydrothermal fluid flow in the Kokanee Range, British Columbia, Canada
Authors: Beaudoin, G Therrien, R
Citation: G. Beaudoin et R. Therrien, Sources and drains: Major controls of hydrothermal fluid flow in the Kokanee Range, British Columbia, Canada, GEOLOGY, 27(10), 1999, pp. 883-886
Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism forlow defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces
Authors: Therrien, R Lucovsky, G Davis, RF
Citation: R. Therrien et al., Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism forlow defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces, PHYS ST S-A, 176(1), 1999, pp. 793-796
Risultati: 1-9 |