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Results: 1-13 |
Results: 13
Electrical transport of 2D electrons in non-uniform magnetic fields
Authors: Gallagher, BL Kubrak, V Rushforth, AW Neumann, AC Edmonds, KW Main, PC Henini, M Marrows, CH Hickey, BJ Thoms, S
Citation: Bl. Gallagher et al., Electrical transport of 2D electrons in non-uniform magnetic fields, PHYSICA E, 11(2-3), 2001, pp. 171-176
T-gate fabrication using a ZEP520A/UVIII bilayer
Authors: Chen, Y MacIntyre, D Thoms, S
Citation: Y. Chen et al., T-gate fabrication using a ZEP520A/UVIII bilayer, MICROEL ENG, 57-8, 2001, pp. 939-943
Magnetoresistance oscillations due to internal Landau band structure of a two-dimensional electron system in a periodic magnetic field - art. no. 041303
Authors: Edmonds, KW Gallagher, BL Main, PC Overend, N Wirtz, R Nogaret, A Henini, M Marrows, CH Hickey, BJ Thoms, S
Citation: Kw. Edmonds et al., Magnetoresistance oscillations due to internal Landau band structure of a two-dimensional electron system in a periodic magnetic field - art. no. 041303, PHYS REV B, 6404(4), 2001, pp. 1303
Fermi-edge singularities in a one-dimensional electron system in magnetic field
Authors: Stallard, WG Plaut, AS Thoms, S Holland, MC Beaumont, SP Stanley, CR Hopkinson, M
Citation: Wg. Stallard et al., Fermi-edge singularities in a one-dimensional electron system in magnetic field, SOL ST COMM, 119(1), 2001, pp. 55-58
Model of the carbon concentrating mechanism in chloroplasts of eukaryotic algae
Authors: Thoms, S Pahlow, M Wolf-Gladrow, DA
Citation: S. Thoms et al., Model of the carbon concentrating mechanism in chloroplasts of eukaryotic algae, J THEOR BIO, 208(3), 2001, pp. 295-313
Giant magnetoresistance induced by magnetic barriers
Authors: Kubrak, V Edmonds, KW Neumann, AC Gallagher, BL Main, PC Henini, M Marrows, CH Hickey, BJ Thoms, S
Citation: V. Kubrak et al., Giant magnetoresistance induced by magnetic barriers, IEEE MAGNET, 37(4), 2001, pp. 1992-1994
Fabrication of 30 nm T gates using SiNx as a supporting and definition layer
Authors: Chen, Y Edgar, D Li, X Macintyre, D Thoms, S
Citation: Y. Chen et al., Fabrication of 30 nm T gates using SiNx as a supporting and definition layer, J VAC SCI B, 18(6), 2000, pp. 3521-3524
2D electron gas in non-uniform magnetic fields
Authors: Gallagher, BL Kubrak, V Rushforth, AW Neumann, AC Edmonds, KW Main, PC Henini, M Marrows, CH Hickey, BJ Thoms, S Dahlbarg, DE
Citation: Bl. Gallagher et al., 2D electron gas in non-uniform magnetic fields, ACT PHY P A, 98(3), 2000, pp. 217-230
A study of electron forward scattering effects on the footwidth of T-gatesfabricated using a bilayer of PMMA and UVIII
Authors: Chen, Y Macintyre, D Thoms, S
Citation: Y. Chen et al., A study of electron forward scattering effects on the footwidth of T-gatesfabricated using a bilayer of PMMA and UVIII, MICROEL ENG, 53(1-4), 2000, pp. 349-352
Electron beam lithography process for T- and Gamma-shaped gate fabricationusing chemically amplified DUV resists and PMMA
Authors: Chen, Y Macintyre, D Thoms, S
Citation: Y. Chen et al., Electron beam lithography process for T- and Gamma-shaped gate fabricationusing chemically amplified DUV resists and PMMA, J VAC SCI B, 17(6), 1999, pp. 2507-2511
Process optimisation of DUV photoresists for electron beam lithography
Authors: Thoms, S Macintyre, D
Citation: S. Thoms et D. Macintyre, Process optimisation of DUV photoresists for electron beam lithography, MICROEL ENG, 46(1-4), 1999, pp. 287-290
SiGe p-channel MOSFETs with tungsten gate
Authors: Ternent, G Asenov, A Thayne, IG MacIntyre, DS Thoms, S Wilkinson, CDW Parker, EHC Gundlach, AM
Citation: G. Ternent et al., SiGe p-channel MOSFETs with tungsten gate, ELECTR LETT, 35(5), 1999, pp. 430-431
Fabrication of T-shaped gates using UVIII chemically amplified DUV resist and PMMA
Authors: Chen, Y Macintyre, D Thoms, S
Citation: Y. Chen et al., Fabrication of T-shaped gates using UVIII chemically amplified DUV resist and PMMA, ELECTR LETT, 35(4), 1999, pp. 338-339
Risultati: 1-13 |