Authors: Heremans, J Thrush, CM Lin, YM Cronin, SB Dresselhaus, MS

Citation: J. Heremans et al., Transport properties of antimony nanowires - art. no. 085406, PHYS REV B, 6308(8), 2001, pp. 5406

Authors: Heremans, JP Thrush, CM Morelli, DT

Citation: Jp. Heremans et al., Geometrical magnetothermopower in semiconductors, PHYS REV L, 86(10), 2001, pp. 2098-2101

Authors: Heremans, J Thrush, CM Lin, YM Cronin, S Zhang, Z Dresselhaus, MS Mansfield, JF

Citation: J. Heremans et al., Bismuth nanowire arrays: Synthesis and galvanomagnetic properties, PHYS REV B, 61(4), 2000, pp. 2921-2930

Authors: Partin, DL Heremans, J Thrush, CM

Citation: Dl. Partin et al., Effect of an In1-xAlxSb buffer layer on InSb thin film mobility, J VAC SCI B, 17(3), 1999, pp. 1267-1271

Authors: Heremans, J Thrush, CM

Citation: J. Heremans et Cm. Thrush, Thermoelectric power of bismuth nanowires, PHYS REV B, 59(19), 1999, pp. 12579-12583

Authors: Partin, DL Pelczynski, M Cooke, P Green, L Heremans, J Thrush, CM

Citation: Dl. Partin et al., The influence of stoichiometry on the growth of tellurium-doped indium antimonide for magnetic field sensors, J CRYST GR, 195(1-4), 1998, pp. 378-384