Authors: Tilak, V Green, B Kaper, V Kim, H Prunty, T Smart, J Shealy, J Eastman, L

Citation: V. Tilak et al., Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs, IEEE ELEC D, 22(11), 2001, pp. 504-506

Authors: Eastman, LF Tilak, V Smart, J Green, BM Chumbes, EM Dimitrov, R Kim, H Ambacher, OS Weimann, N Prunty, T Murphy, M Schaff, WJ Shealy, JR

Citation: Lf. Eastman et al., Undoped AlGaN/GaN HEMTs for microwave power amplification, IEEE DEVICE, 48(3), 2001, pp. 479-485

Authors: Green, BM Chu, KK Smart, JA Tilak, V Kim, H Shealy, JR Eastman, LF

Citation: Bm. Green et al., Cascode connected AlGaN/GaN HEMT's on SiC substrates, IEEE MICR G, 10(8), 2000, pp. 316-318

Authors: Dimitrov, R Tilak, V Yeo, W Green, B Kim, H Smart, J Chumbes, E Shealy, JR Schaff, W Eastman, LF Miskys, C Ambacher, O Stutzmann, M

Citation: R. Dimitrov et al., Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors, SOL ST ELEC, 44(8), 2000, pp. 1361-1365

Authors: Foutz, BE Ambacher, O Murphy, MJ Tilak, V Eastman, LF

Citation: Be. Foutz et al., Polarization induced charge at heterojunctions of the III-V nitrides and their alloys, PHYS ST S-B, 216(1), 1999, pp. 415-418