Authors: Timp, G Bude, J Baumann, F Bourdelle, KK Boone, T Garno, J Ghetti, A Green, M Gossmann, H Kim, Y Kleiman, R Kornblit, A Klemens, F Moccio, S Muller, D Rosamilia, J Silverman, P Sorsch, T Timp, W Tennant, D Tung, R Weir, B

Citation: G. Timp et al., The relentless march of the MOSFET gate oxide thickness to zero, MICROEL REL, 40(4-5), 2000, pp. 557-562

Authors: Tennant, DM Timp, GL Ocola, LE Green, M Sorsch, T Kornblit, A Klemens, F Kleiman, R Kim, Y Timp, W

Citation: Dm. Tennant et al., Progress toward a 30 nm silicon metal-oxide-semiconductor gate technology, J VAC SCI B, 17(6), 1999, pp. 3158-3163

Authors: O'Malley, ML Timp, GL Timp, W Moccio, SV Garno, JP Kleiman, RN

Citation: Ml. O'Malley et al., Electrical simulation of scanning capacitance microscopy imaging of the pnjunction with semiconductor probe tips, APPL PHYS L, 74(24), 1999, pp. 3672-3674