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Results: 1-8 |
Results: 8
Field emisison from GaN on Si substrate
Authors: Czarczynski, W Kieszkowski, P Lasisz, S Paszkiewicz, R Tlaczala, M Znamirowski, Z Zolnierz, E
Citation: W. Czarczynski et al., Field emisison from GaN on Si substrate, J VAC SCI B, 19(1), 2001, pp. 47-49
Photoreflectance investigations of GaN epitaxial layers
Authors: Sitarek, P Kudrawiec, R Sek, G Misiewicz, J Paszkiewicz, R Korbutowicz, R Paszkiewicz, B Tlaczala, M
Citation: P. Sitarek et al., Photoreflectance investigations of GaN epitaxial layers, MAT SCI E B, 82(1-3), 2001, pp. 209-211
MOVPE GaN grown on alternative substrates
Authors: Paszkiewicz, R Paszkiewicz, B Korbutowicz, R Kozlowski, J Tlaczala, M Bryja, L Kudrawiec, R Misiewicz, J
Citation: R. Paszkiewicz et al., MOVPE GaN grown on alternative substrates, CRYST RES T, 36(8-10), 2001, pp. 971-977
Epitaxial growth and characterisation of silicon delta-doped GaAs, AlAs and AlxGa1-xAs
Authors: Sciana, B Radziewicz, D Paszkiewicz, B Tlaczala, M Utko, M Sitarek, P Misiewcz, J Kinder, R Kovac, J
Citation: B. Sciana et al., Epitaxial growth and characterisation of silicon delta-doped GaAs, AlAs and AlxGa1-xAs, CRYST RES T, 36(8-10), 2001, pp. 1145-1154
Optical characterisation of strained-layer InxGa1-xAs/GaAs MQW LED grown by MOVPE
Authors: Sek, G Ciorga, M Bryja, L Misiewicz, J Radziewicz, D Sciana, B Tlaczala, M
Citation: G. Sek et al., Optical characterisation of strained-layer InxGa1-xAs/GaAs MQW LED grown by MOVPE, OPT APPL, 30(1), 2000, pp. 183-188
Photoreflectance study of delta-doped semiconductor layers by a fast Fourier transformation
Authors: Nowaczyk, M Sek, G Misiewicz, J Sciana, B Radziewivz, D Tlaczala, M
Citation: M. Nowaczyk et al., Photoreflectance study of delta-doped semiconductor layers by a fast Fourier transformation, THIN SOL FI, 380(1-2), 2000, pp. 243-245
The influence of MOCVD process scheme on the optical properties of GaN layers
Authors: Ciorga, M Bryja, L Misiewicz, J Paszkiewicz, R Korbutowicz, R Panek, M Paszkiewicz, B Tlaczala, M
Citation: M. Ciorga et al., The influence of MOCVD process scheme on the optical properties of GaN layers, MAT SCI E B, 59(1-3), 1999, pp. 16-19
Field emission from GaN deposited on the (100) Si substrate
Authors: Czarczynski, W Lasisz, S Moraw, M Paszkiewicz, R Tlaczala, M Znamirowski, Z
Citation: W. Czarczynski et al., Field emission from GaN deposited on the (100) Si substrate, APPL SURF S, 151(1-2), 1999, pp. 63-66
Risultati: 1-8 |