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Results: 5

Authors: Polupan, GP Torchynska, TV Gomez, JP Gonzalez, HAF Espinoza, FGB Torre, AI Bulakh, BM Scherbina, LV
Citation: Gp. Polupan et al., Comparative investigations of surface structure, photoluminescence and itsexcitation in silicon wires, J ELEC SPEC, 114, 2001, pp. 235-241

Authors: Torchynska, TV Gomez, JP Polupan, GP Espinoza, FGB Borquez, AG Korsunskaya, NE Khomenkova, LY
Citation: Tv. Torchynska et al., Complex nature of the red photoluminescence band and peculiarities of its excitation in porous silicon, APPL SURF S, 167(3-4), 2000, pp. 197-204

Authors: Torchynska, TV Korsunska, NE Dzhumaev, BR Khomenkova, LY
Citation: Tv. Torchynska et al., Three approaches to surface substance role investigation in porous siliconphotoluminescence and its excitation, J PHYS CH S, 61(6), 2000, pp. 937-941

Authors: Torchynska, TV Sheinkman, MK Korsunskaya, NE Khomenkovan, LY Bulakh, BM Dzhumaev, BR Many, A Goldstein, Y Savir, E
Citation: Tv. Torchynska et al., OH-related emitting centers in interface layer of porous silicon, PHYSICA B, 274, 1999, pp. 955-958

Authors: Torchynska, TV Polupan, GP Kooshnirenko, VI Scherbina, E
Citation: Tv. Torchynska et al., Mechanism of injection-enhanced defect transformation in LPE GaAs structures, PHYSICA B, 274, 1999, pp. 1037-1040
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