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Authors: Henke, W Torkler, M

Citation: W. Henke et M. Torkler, Modeling of edge roughness in ion projection lithography, J VAC SCI B, 17(6), 1999, pp. 3112-3118

Authors: Bruenger, WH Torkler, M Weiss, M Loschner, H Leung, K Lee, Y Hudek, P Rangelow, IW Stangl, G Fallmann, W

Citation: Wh. Bruenger et al., Minimum ion-beam exposure-dose determination for chemically amplified resist from printed dot matrices, J VAC SCI B, 17(6), 1999, pp. 3119-3121

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Citation: Cr. Szmanda et al., Measuring acid generation efficiency in chemically amplified resists with all three beams, J VAC SCI B, 17(6), 1999, pp. 3356-3361

Authors: Bruenger, WH Torkler, M Leung, KN Lee, Y Williams, MD Loeschner, H Stengl, G Fallmann, W Paschke, F Stangl, G Rangelow, IW Hudek, P

Citation: Wh. Bruenger et al., Resolution improvement of ion projector with a low energy spread multicuspion source, MICROEL ENG, 46(1-4), 1999, pp. 477-480