Authors:
Torres, VM
Jordan, DC
Tsong, IST
Doak, RB
Citation: Vm. Torres et al., Supersonic beam epitaxy of wide bandgap semiconductors, ATOMIC AND MOLECULAR BEAMS: THE STATE OF THE ART 2000, 2001, pp. 945-958
Authors:
Torres, VM
Doak, RB
Wilkens, BJ
Smith, DJ
Tsong, IST
Citation: Vm. Torres et al., Selected energy epitaxial deposition of GaN and AlN on SiC(0001) using seeded supersonic free jets of NH3 in helium, J VAC SCI A, 17(4), 1999, pp. 1570-1576
Authors:
Pavlovska, A
Torres, VM
Edwards, JL
Bauer, E
Smith, DJ
Doak, RB
Tsong, IST
Thomson, DB
Davis, RF
Citation: A. Pavlovska et al., Homoepitaxial GaN layers studied by low-energy electron microscopy, atomicforce microscopy and transmission electron microscopy, PHYS ST S-A, 176(1), 1999, pp. 469-473
Authors:
Pavlovska, A
Torres, VM
Bauer, E
Doak, RB
Tsong, IST
Thomson, DB
Davis, RF
Citation: A. Pavlovska et al., Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source, APPL PHYS L, 75(7), 1999, pp. 989-991
Authors:
Torres, VM
Edwards, JL
Wilkens, BJ
Smith, DJ
Doak, RB
Tsong, IST
Citation: Vm. Torres et al., Influence of 6H-SiC(0001) substrate surface morphology on the growth of AlN epitaxial layers, APPL PHYS L, 74(7), 1999, pp. 985-987