Citation: A. Touhami et A. Bouhdada, Modeling of gate-induced drain leakage current in n-type metal-oxide-semiconductor field effect transistor, J APPL PHYS, 89(3), 2001, pp. 1880-1884
Authors:
Davenas, J
Mlika, R
Baouab, H
Touhami, A
Gamoudi, M
Citation: J. Davenas et al., Rutherford backscattering spectrometry investigations of chemical sensors for the detection of metals: application to calixarene and functionalized cottons, SENS ACTU-B, 59(2-3), 1999, pp. 220-224
Authors:
Bouhdada, A
Nouacry, A
Bakkali, S
Touhami, A
Marrakh, R
Citation: A. Bouhdada et al., Effect of defects localised in the oxide of submicrometer NMOS transistor on substrate and drain currents, MICROELEC J, 30(1), 1999, pp. 19-22