Authors: Sugihara, D Kikuchi, A Kusakabe, K Nakamura, S Toyoura, Y Yamada, T Kishino, K

Citation: D. Sugihara et al., High-quality GaN on AlN multiple intermediate layer with migration enhanced epitaxy by rf-molecular beam epitaxy, JPN J A P 2, 39(3AB), 2000, pp. L197-L199

Authors: Sugihara, D Kikuchi, A Kusakabe, K Nakamura, S Toyoura, Y Yamada, T Kishino, K

Citation: D. Sugihara et al., Suppression of inversion domains and decrease of threading dislocations inmigration enhanced epitaxial GaN by RF-molecular beam epitaxy, PHYS ST S-A, 180(1), 2000, pp. 65-71

Authors: Nakamura, S Kikuchi, A Kusakabe, K Sugihara, D Toyoura, Y Yamada, T Kishino, K

Citation: S. Nakamura et al., InGaN/GaN MQW and Mg-doped GaN growth using a shutter control method by RF-molecular beam epitaxy, PHYS ST S-A, 176(1), 1999, pp. 273-277

Authors: Sugihara, D Kikuchi, A Kusakabe, K Nakamura, S Toyoura, Y Yamada, T Kishino, K

Citation: D. Sugihara et al., 2.6 mu m/h high-speed growth of GaN by RF-molecular beam epitaxy and improvement of crystal quality by migration enhanced epitaxy, PHYS ST S-A, 176(1), 1999, pp. 323-328