Authors:
Cassabois, G
Bogani, F
Triques, ALC
Delalande, C
Roussignol, P
Citation: G. Cassabois et al., Interference effect in the resonant emission of a semiconductor microcavity - art. no. 045321, PHYS REV B, 6404(4), 2001, pp. 5321
Authors:
Triques, ALC
Iikawa, F
Brum, JA
Maialle, MZ
Pereira, RG
Borghs, G
Citation: Alc. Triques et al., Carrier spin polarization near the Fermi level in n-modulation doped AlGaAs/InGaAs/GaAs quantum well, SUPERLATT M, 25(3), 1999, pp. 551-554
Authors:
Rasnik, I
Rego, LGC
Marquezini, MV
Triques, ALC
Brasil, MJSP
Brum, JA
Cotta, MA
Citation: I. Rasnik et al., Confinement versus localization for quantum wells and quantum wires in a self-assembled structure, SUPERLATT M, 25(1-2), 1999, pp. 137-141
Authors:
Gobato, YG
Triques, ALC
Rivera, PH
Schulz, PA
Citation: Yg. Gobato et al., Spectroscopy of growth islands in GaAs/In0.1Ga0.9As/AlAs double-barrier structures from photoluminescence and resonant tunneling studies, PHYS REV B, 60(8), 1999, pp. 5664-5672
Authors:
Triques, ALC
Urdanivia, J
Iikawa, F
Maialle, MZ
Brum, JA
Borhgs, G
Citation: Alc. Triques et al., Electron-spin polarization near the Fermi level in n-type modulation-dopedsemiconductor quantum wells, PHYS REV B, 59(12), 1999, pp. R7813-R7816