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Results: 1-9 |
Results: 9

Authors: Cassabois, G Bogani, F Triques, ALC Delalande, C Roussignol, P
Citation: G. Cassabois et al., Interference effect in the resonant emission of a semiconductor microcavity - art. no. 045321, PHYS REV B, 6404(4), 2001, pp. 5321

Authors: Cassabois, G Triques, ALC Bogani, F Delalande, C Roussignol, P Piermarocchi, C
Citation: G. Cassabois et al., Polariton-acoustic-phonon interaction in a semiconductor microcavity, PHYS REV B, 61(3), 2000, pp. 1696-1699

Authors: Cassabois, G Triques, ALC Delalande, C Roussignol, P Bogani, F
Citation: G. Cassabois et al., Coherent response of a semiconductor microcavity, PHYS ST S-A, 178(1), 2000, pp. 385-390

Authors: Triques, ALC Cordeiro, CMB Balestrieri, V Lesche, B Margulis, W Carvalho, ICS
Citation: Alc. Triques et al., Depletion region in thermally poled fused silica, APPL PHYS L, 76(18), 2000, pp. 2496-2498

Authors: Triques, ALC Iikawa, F Brum, JA Maialle, MZ Pereira, RG Borghs, G
Citation: Alc. Triques et al., Carrier spin polarization near the Fermi level in n-modulation doped AlGaAs/InGaAs/GaAs quantum well, SUPERLATT M, 25(3), 1999, pp. 551-554

Authors: Rasnik, I Rego, LGC Marquezini, MV Triques, ALC Brasil, MJSP Brum, JA Cotta, MA
Citation: I. Rasnik et al., Confinement versus localization for quantum wells and quantum wires in a self-assembled structure, SUPERLATT M, 25(1-2), 1999, pp. 137-141

Authors: Gobato, YG Triques, ALC Rivera, PH Schulz, PA
Citation: Yg. Gobato et al., Spectroscopy of growth islands in GaAs/In0.1Ga0.9As/AlAs double-barrier structures from photoluminescence and resonant tunneling studies, PHYS REV B, 60(8), 1999, pp. 5664-5672

Authors: Cassabois, G Triques, ALC Larousserie, D Delalande, C Roussignol, P Senellart-Mardon, P Bloch, J Thierry-Mieg, V Planel, R
Citation: G. Cassabois et al., Stationary coherence in semiconductor microcavities, PHYS REV B, 59(16), 1999, pp. R10429-R10432

Authors: Triques, ALC Urdanivia, J Iikawa, F Maialle, MZ Brum, JA Borhgs, G
Citation: Alc. Triques et al., Electron-spin polarization near the Fermi level in n-type modulation-dopedsemiconductor quantum wells, PHYS REV B, 59(12), 1999, pp. R7813-R7816
Risultati: 1-9 |