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Results:
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Results: 3
Lithography simulation with aerial image - Variable threshold resist model
Authors:
Randall, J Gangala, H Tritchkov, A
Citation:
J. Randall et al., Lithography simulation with aerial image - Variable threshold resist model, MICROEL ENG, 46(1-4), 1999, pp. 59-63
0.18 mu m KrF lithography using optical proximity correction based on empirical behavior modeling
Authors:
Tritchkov, A Stirniman, J Gangala, H Ronse, K
Citation:
A. Tritchkov et al., 0.18 mu m KrF lithography using optical proximity correction based on empirical behavior modeling, J VAC SCI B, 16(6), 1998, pp. 3398-3404
Optically induced mask critical dimension error magnification in 248 nm lithography
Authors:
Randall, JN Tritchkov, A
Citation:
Jn. Randall et A. Tritchkov, Optically induced mask critical dimension error magnification in 248 nm lithography, J VAC SCI B, 16(6), 1998, pp. 3606-3611
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