Authors:
Chaudhuri, J
Ignatiev, C
Stepanov, S
Tsvetkov, D
Cherenkov, A
Dmitriev, V
Rek, Z
Citation: J. Chaudhuri et al., High quality GaN layers grown by hydride vapor phase epitaxy - a high resolution X-ray diffractometry and synchrotron X-ray topography study, MAT SCI E B, 78(1), 2000, pp. 22-27