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Results: 51-65/65
Authors:
Buyanova, IA
Chen, WM
Pozina, G
Monemar, B
Xin, HP
Tu, CW
Citation: Ia. Buyanova et al., Mechanism for light emission in GaNAs/GaAs structures grown by molecular beam epitaxy, PHYS ST S-B, 216(1), 1999, pp. 125-129
Authors:
Shi, BQ
Tu, CW
Citation: Bq. Shi et Cw. Tu, A kinetic model for tris(dimethylamino) arsine decomposition on GaAs(100) surfaces, J ELEC MAT, 28(1), 1999, pp. 43-49
Transport properties of intrinsically and extrinsically modulation doped InP/InGaAs heterostructures
Authors:
Chen, WM
Buyanov, AV
Buyanova, IA
Lundstrom, T
Bi, WG
Zeng, YP
Tu, CW
Citation: Wm. Chen et al., Transport properties of intrinsically and extrinsically modulation doped InP/InGaAs heterostructures, PHYS SCR, T79, 1999, pp. 103-105
Authors:
Xin, HP
Kavanagh, KL
Kondow, M
Tu, CW
Citation: Hp. Xin et al., Effects of rapid thermal annealing on GaInNAs GaAs multiple quantum wells, J CRYST GR, 202, 1999, pp. 419-422
Authors:
Buyanova, IA
Chen, WM
Bi, WG
Zeng, YP
Tu, CW
Citation: Ia. Buyanova et al., Intrinsic modulation doping in InP-based structures: properties relevant to device applications, J CRYST GR, 202, 1999, pp. 786-789
Authors:
Tomich, DH
Mitchel, WC
Chow, P
Tu, CW
Citation: Dh. Tomich et al., Study of interfaces in GaInSb InAs quantum wells by high-resolution X-ray diffraction and reciprocal space mapping, J CRYST GR, 202, 1999, pp. 868-871
Authors:
Seong, TY
Bae, IT
Choi, CJ
Noh, DY
Zhao, Y
Tu, CW
Citation: Ty. Seong et al., Microstructures of GaN1-xPx layers grown on (0001)GaN substrates by gas source molecular beam epitaxy, J APPL PHYS, 85(6), 1999, pp. 3192-3197
Authors:
Shi, BQ
Tu, CW
Citation: Bq. Shi et Cw. Tu, Chemical beam epitaxy of InP with Ar+ laser irradiation, J ELCHEM SO, 146(7), 1999, pp. 2679-2682
Authors:
Buyanova, IA
Chen, WM
Pozina, G
Bergman, JP
Monemar, B
Xin, HP
Tu, CW
Citation: Ia. Buyanova et al., Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy, APPL PHYS L, 75(4), 1999, pp. 501-503
Authors:
Buyanova, IA
Chen, WM
Monemar, B
Xin, HP
Tu, CW
Citation: Ia. Buyanova et al., Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures, APPL PHYS L, 75(24), 1999, pp. 3781-3783
Authors:
Buyanova, IA
Chen, WM
Bi, WG
Zeng, YP
Tu, CW
Citation: Ia. Buyanova et al., Thermal stability and doping efficiency of intrinsic modulation doping in InP-based structures, APPL PHYS L, 75(12), 1999, pp. 1733-1735
Authors:
Xin, HP
Tu, CW
Geva, M
Citation: Hp. Xin et al., Annealing behavior of p-type Ga0.892In0.108NxAs1-x (0 <= X <= 0.024) grownby gas-source molecular beam epitaxy, APPL PHYS L, 75(10), 1999, pp. 1416-1418
Authors:
Zhao, Y
Tu, CW
Bae, IT
Seong, TY
Citation: Y. Zhao et al., Growth of cubic GaN by phosphorus-mediated molecular beam epitaxy, APPL PHYS L, 74(21), 1999, pp. 3182-3184
Authors:
Xin, HP
Kavanagh, KL
Zhu, ZQ
Tu, CW
Citation: Hp. Xin et al., Observation of quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells, APPL PHYS L, 74(16), 1999, pp. 2337-2339
Authors:
Shi, BQ
Tu, CW
Citation: Bq. Shi et Cw. Tu, Modeling study of silicon incorporation from SiBr4 in GaAs layers grown bychemical beam epitaxy, J CRYST GR, 195(1-4), 1998, pp. 740-745