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Results: 1-7 |
Results: 7
Defect reduction in HVPE growth of GaN and related optical spectra
Authors: Paskova, T Paskov, PP Darakchieva, V Tungasmita, S Birch, J Monemar, B
Citation: T. Paskova et al., Defect reduction in HVPE growth of GaN and related optical spectra, PHYS ST S-A, 183(1), 2001, pp. 197-203
Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer
Authors: Paskova, T Valcheva, E Birch, J Tungasmita, S Persson, POA Paskov, PP Evtimova, S Abrashev, M Monemar, B
Citation: T. Paskova et al., Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer, J CRYST GR, 230(3-4), 2001, pp. 381-386
Hydride vapour phase homoepitaxial growth of GaN on MOCVD-grown 'templates'
Authors: Paskova, T Tungasmita, S Valcheva, E Svedberg, EB Arnaudov, B Evtimova, S Persson, PA Henry, A Beccard, R Heuken, M Monemar, B
Citation: T. Paskova et al., Hydride vapour phase homoepitaxial growth of GaN on MOCVD-grown 'templates', MRS I J N S, 5, 2000, pp. NIL_117-NIL_123
Effect of Si doping of metalorganic chemical vapor deposition-GaN templates on the defect arrangement in hydride vapor phase epitaxy-GaN overgrown layers
Authors: Paskova, T Valcheva, E Birch, J Tungasmita, S Persson, POA Beccard, R Heuken, M Monemar, B
Citation: T. Paskova et al., Effect of Si doping of metalorganic chemical vapor deposition-GaN templates on the defect arrangement in hydride vapor phase epitaxy-GaN overgrown layers, J APPL PHYS, 88(10), 2000, pp. 5729-5732
Enhanced quality of epitaxial AlN thin films on 6H-SiC by ultra-high-vacuum ion-assisted reactive dc magnetron sputter deposition
Authors: Tungasmita, S Birch, J Persson, POA Jarrendahl, K Hultman, L
Citation: S. Tungasmita et al., Enhanced quality of epitaxial AlN thin films on 6H-SiC by ultra-high-vacuum ion-assisted reactive dc magnetron sputter deposition, APPL PHYS L, 76(2), 2000, pp. 170-172
Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer
Authors: Valcheva, E Paskova, T Tungasmita, S Persson, POA Birch, J Svedberg, EB Hultman, L Monemar, B
Citation: E. Valcheva et al., Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer, APPL PHYS L, 76(14), 2000, pp. 1860-1862
Thick hydride vapour phase epitaxial GaN layers grown on sapphire with different buffers
Authors: Paskova, T Birch, J Tungasmita, S Beccard, R Heuken, M Svedberg, EB Runesson, P Goldys, EM Monemar, B
Citation: T. Paskova et al., Thick hydride vapour phase epitaxial GaN layers grown on sapphire with different buffers, PHYS ST S-A, 176(1), 1999, pp. 415-419
Risultati: 1-7 |