AAAAAA

   
Results: 1-6 |
Results: 6

Authors: Kudryashov, VE Mamakin, SS Turkin, AN Yunovich, AE Kovalev, AN Manyakhin, FI
Citation: Ve. Kudryashov et al., Luminescence spectra and efficiency of GaN-based quantum-well heterostructure light emitting diodes: Current and voltage dependence, SEMICONDUCT, 35(7), 2001, pp. 827-834

Authors: Kudryashov, VE Mamakin, SS Turkin, AN Yunovich, AE Kovalev, AN Manyakhin, FI
Citation: Ve. Kudryashov et al., Dependence of aging on inhomogeneities in InGaN/AlGaN/GaN light-emitting diodes, MRS I J N S, 5, 2000, pp. NIL_574-NIL_579

Authors: Kudryashov, VE Turkin, AN Yunovich, AE Kovalev, AN Manyakhin, FI
Citation: Ve. Kudryashov et al., Luminescence and electrical properties of InGaN/AlGaN/GaN light emitting diodes with multiple quantum wells, SEMICONDUCT, 33(4), 1999, pp. 429-434

Authors: Kovalev, AN Manyakhin, FI Kudryashov, VE Turkin, AN Yunovich, AE
Citation: An. Kovalev et al., Changes in the luminescent and electrical properties of InGaN/AlGaN/GaN light-emitting diodes during extended operation, SEMICONDUCT, 33(2), 1999, pp. 192-199

Authors: Yunovich, AE Kudryashov, VE Mamakin, SS Turkin, AN Kovalev, AN Manyakhin, FI
Citation: Ae. Yunovich et al., Spectra and quantum efficiency of light-emitting diodes based on GaN heterostructures with quantum wells, PHYS ST S-A, 176(1), 1999, pp. 125-130

Authors: Schwegler, V Schad, SS Kirchner, C Seyboth, M Kamp, M Ebeling, KJ Kudryashov, VE Turkin, AN Yunovich, AE Stempfle, U Link, A Limmer, W Sauer, R
Citation: V. Schwegler et al., Ohmic heating of InGaN LEDs during operation: Determination of the junction temperature and its influence on device performance, PHYS ST S-A, 176(1), 1999, pp. 783-786
Risultati: 1-6 |