Authors: UCHIBORI CJ OHTANI Y OKU T ONO N MURAKAMI M

Citation: Cj. Uchibori et al., INXGA1-XAS OHMIC CONTACTS TO N-TYPE GAAS WITH A TUNGSTEN NITRIDE BARRIER, Journal of electronic materials, 26(4), 1997, pp. 410-414

Authors: UCHIBORI CJ OHTANI Y OKU T ONO N MURAKAMI M

Citation: Cj. Uchibori et al., INXGA1-XAS-BASED OHMIC CONTACTS TO N-TYPE GAAS WITH W-NITRIDE BARRIERPREPARED BY RADIO-FREQUENCY SPUTTERING, Applied surface science, 117, 1997, pp. 347-351

Authors: OKU T FURUMAI M UCHIBORI CJ MURAKAMI M

Citation: T. Oku et al., FORMATION OF WSI-BASED OHMIC CONTACTS TO N-TYPE GAAS, Thin solid films, 300(1-2), 1997, pp. 218-222

Authors: UCHIBORI CJ OKU T KAMEYA N ONO N MURAKAMI M

Citation: Cj. Uchibori et al., EFFECTS OF DEPOSITION SEQUENCE ON ELECTRICAL-PROPERTIES OF INAS-NI-W OHMIC CONTACTS TO N-TYPE GAAS, Materials transactions, JIM, 37(4), 1996, pp. 670-675

Authors: OKUNISHI M UCHIBORI CJ OKU T OTSUKI A ONO N MURAKAMI M

Citation: M. Okunishi et al., INXGA1-XAS OHMIC CONTACTS TO N-TYPE GAAS PREPARED BY SPUTTER-DEPOSITION, Journal of electronic materials, 24(4), 1995, pp. 333-339

Authors: UCHIBORI CJ OKUNISHI M OKU T OTSUKI A ONO N MURAKAMI M

Citation: Cj. Uchibori et al., FORMATION MECHANISM OF INXGA1-XAS OHMIC CONTACTS TO N-TYPE GAAS PREPARED BY RADIO-FREQUENCY SPUTTERING, Journal of electronic materials, 23(9), 1994, pp. 983-989