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A SIMPLE OHMIC-CONTACT FORMATION TECHNOLOGY USING PHOSPHINE PLASMA TREATMENT FOR TOP-GATE AMORPHOUS-SILICON THIN-FILM TRANSISTORS
Authors: UGAI E YUKAWA T AMANO K AOKI S
Citation: E. Ugai et al., A SIMPLE OHMIC-CONTACT FORMATION TECHNOLOGY USING PHOSPHINE PLASMA TREATMENT FOR TOP-GATE AMORPHOUS-SILICON THIN-FILM TRANSISTORS, JPN J A P 1, 37(6A), 1998, pp. 3226-3231
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