AAAAAA
Results:
1-13
|
Results: 13
Authors:
MATHON J
VILLERET M
UMERSKI A
MUNIZ RB
CASTRO JD
EDWARDS DM
Citation: J. Mathon et al., QUANTUM-WELL THEORY OF THE EXCHANGE COUPLING IN MAGNETIC MULTILAYERS WITH APPLICATION TO CO CU/CO(001)/, Physical review. B, Condensed matter, 56(18), 1997, pp. 11797-11809
Authors:
UMERSKI A
Citation: A. Umerski, CLOSED-FORM SOLUTIONS TO SURFACE GREENS-FUNCTIONS, Physical review. B, Condensed matter, 55(8), 1997, pp. 5266-5275
Authors:
MATHON J
UMERSKI A
VILLERET M
Citation: J. Mathon et al., OSCILLATIONS WITH CO AND CU THICKNESS OF THE CURRENT-PERPENDICULAR-TO-PLANE GIANT MAGNETORESISTANCE OF A CO CU/CO(001) TRILAYER/, Physical review. B, Condensed matter, 55(21), 1997, pp. 14378-14386
Authors:
CASTRO JDE
MATHON J
VILLERET M
UMERSKI A
Citation: Jde. Castro et al., CONFINEMENT MECHANISM FOR STRONG TEMPERATURE-DEPENDENCE OF THE INTERLAYER EXCHANGE COUPLING IN CO CU(001)/, Physical review. B, Condensed matter, 53(20), 1996, pp. 13306-13309
Authors:
UMERSKI A
SRIVASTAVA GP
Citation: A. Umerski et Gp. Srivastava, GEOMETRY AND ELECTRONIC BAND-STRUCTURE OF AN ORDERED MONOLAYER DEPOSITION OF BI ON III-V(110) SEMICONDUCTOR SURFACES (VOL 51, PG 2334, 1995), Physical review. B, Condensed matter, 52(15), 1995, pp. 11519-11519
Authors:
UMERSKI A
SRIVASTAVA GP
Citation: A. Umerski et Gp. Srivastava, GEOMETRY AND ELECTRONIC BAND-STRUCTURE OF AN ORDERED MONOLAYER DEPOSITION OF BI ON III-V(110) SEMICONDUCTOR SURFACES, Physical review. B, Condensed matter, 51(4), 1995, pp. 2334-2346
Authors:
SRIVASTAVA GP
UMERSKI A
Citation: Gp. Srivastava et A. Umerski, GEOMETRY AND ELECTRONIC-STRUCTURE OF SELENIUM-TREATED INP(110), Surface science, 333, 1995, pp. 590-593
Authors:
UMERSKI A
SRIVASTAVA GP
Citation: A. Umerski et Gp. Srivastava, A ROBUST METHOD OF CALCULATING SURFACE ATOMIC GEOMETRY, Surface science, 309, 1994, pp. 680-684
Authors:
UMERSKI A
SRIVASTAVA GP
Citation: A. Umerski et Gp. Srivastava, CALCULATED ELECTRONIC BAND STRUCTURES OF III-V SEMICONDUCTORS WITH METALLIC OVERLAYERS, Surface science, 309, 1994, pp. 963-968
Authors:
UMERSKI A
SRIVASTAVA GP
Citation: A. Umerski et Gp. Srivastava, GEOMETRY AND ELECTRONIC BAND-STRUCTURE OF GAAS(110)-BI (1 ML), Physical review. B, Condensed matter, 48(11), 1993, pp. 8450-8453
Authors:
UMERSKI A
JONES R
Citation: A. Umerski et R. Jones, THE INTERACTION OF OXYGEN WITH DISLOCATION CORES IN SILICON, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 67(4), 1993, pp. 905-915
Authors:
JONES R
UMERSKI A
SITCH P
HEGGIE MI
OBERG S
Citation: R. Jones et al., DENSITY-FUNCTIONAL CALCULATIONS OF THE STRUCTURE AND PROPERTIES OF IMPURITIES AND DISLOCATIONS IN SEMICONDUCTORS, Physica status solidi. a, Applied research, 138(2), 1993, pp. 369-381
Authors:
HEGGIE MI
JONES R
UMERSKI A
Citation: Mi. Heggie et al., AB-INITIO TOTAL-ENERGY CALCULATIONS OF IMPURITY PINNING IN SILICON, Physica status solidi. a, Applied research, 138(2), 1993, pp. 383-387
Risultati:
1-13
|