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Results:
1-14
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Results: 14
Authors:
UMEZU I
TSUCHIDA T
MAEDA K
Citation: I. Umezu et al., A STUDY OF INTERFACE STATE DENSITY BETWEEN A-SI-H AND INSULATING LAYER IN TERMS OF PLASMA SURFACE-REACTION, Journal of non-crystalline solids, 230, 1998, pp. 1235-1239
Authors:
MAEDA K
UMEZU I
Citation: K. Maeda et I. Umezu, DEFECT FORMATION MECHANISM DURING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF UNDOPED A-SI-H, Journal of non-crystalline solids, 230, 1998, pp. 43-47
Authors:
UMEZU I
KUWAMURA T
KITAMURA K
TSUCHIDA T
MAEDA K
Citation: I. Umezu et al., EFFECT OF PLASMA TREATMENT ON THE DENSITY OF DEFECTS AT AN AMORPHOUS SI-H-INSULATOR INTERFACE, Journal of applied physics, 84(3), 1998, pp. 1371-1377
Authors:
UMEZU I
SHIBATA K
YAMAGUCHI S
SUGIMURA A
YAMADA Y
YOSHIDA T
Citation: I. Umezu et al., EFFECTS OF THERMAL-PROCESSES ON PHOTOLUMINESCENCE OF SILICON NANOCRYSTALLITES PREPARED BY PULSED-LASER ABLATION, Journal of applied physics, 84(11), 1998, pp. 6448-6450
Authors:
MAEDA K
UMEZU I
ISHIZUKA H
Citation: K. Maeda et al., DEFECT FORMATION DURING DEPOSITION OF UNDOPED A-SI-H BY RF GLOW-DISCHARGE, Physical review. B, Condensed matter, 55(7), 1997, pp. 4323-4331
Authors:
YAMADA Y
ORII T
UMEZU I
TAKEYAMA S
YOSHIDA T
Citation: Y. Yamada et al., OPTICAL-PROPERTIES OF SILICON NANOCRYSTALLITES PREPARED BY EXCIMER-LASER ABLATION IN INERT-GAS, JPN J A P 1, 35(2B), 1996, pp. 1361-1365
Authors:
UMEZU I
KITAMURA K
MAEDA K
Citation: I. Umezu et al., INVESTIGATION OF INTERFACE STATE DENSITY BETWEEN A-SI-H AND INSULATING LAYERS BY ESR AND PHOTOTHERMAL DEFLECTION SPECTROSCOPY, Journal of non-crystalline solids, 200, 1996, pp. 778-781
Authors:
UMEZU I
MIYAMOTO K
SAKAMOTO N
MAEDA K
Citation: I. Umezu et al., OPTICAL-BOND GAP AND TAUC GAP IN A-SIOX-H AND A-SINX-H FILMS, JPN J A P 1, 34(4A), 1995, pp. 1753-1758
Authors:
MAEDA K
KUROE A
UMEZU I
Citation: K. Maeda et al., MECHANISM OF SURFACE-REACTION IN THE DEPOSITION PROCESS OF ALPHA-SI-HBY RF GLOW-DISCHARGE, Physical review. B, Condensed matter, 51(16), 1995, pp. 10635-10645
Authors:
MAEDA K
SAKAMOTO N
UMEZU I
Citation: K. Maeda et al., A COMPARATIVE-STUDY ON STRUCTURAL AND ELECTRONIC-PROPERTIES OF PECVD A-SIOX WITH A-SINX, Journal of non-crystalline solids, 187, 1995, pp. 287-290
Authors:
UMEZU I
MAEDA K
Citation: I. Umezu et K. Maeda, ANALYSIS OF JOULE HEAT IN A-SI-H FILM BY PHOTOTHERMAL DETECTION SPECTROSCOPY, JPN J A P 1, 33(10), 1994, pp. 5647-5651
Authors:
UMEZU I
DAIGO M
MEDA K
Citation: I. Umezu et al., INVESTIGATION OF SURFACE PASSIVATION EFFECT OF A-SINX-H ON A-SI-H BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY, JPN J A P 2, 33(6B), 1994, pp. 120000873-120000875
Authors:
MAEDA K
CHIYODA W
UMEZU I
KUROE A
Citation: K. Maeda et al., DEPLETION LAYER WIDTH IN UNDOPED A-SI-H SCHOTTKY-BARRIER REVEALED BY REVERSE BIAS PHOTOCURRENT, Journal of applied physics, 75(7), 1994, pp. 3522-3529
Authors:
MAEDA K
JINNAI T
UMEZU I
Citation: K. Maeda et al., INTERFACE STATE DENSITY OF SINX-H C-SI MIS STRUCTURE/, Journal of non-crystalline solids, 166, 1993, pp. 849-852
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