Authors: URMANOV NA

Citation: Na. Urmanov, TRANSFORMATION OF THE SPECTRUM OF A THERMALLY STIMULATED CURRENT IN AN(-PI-P JUNCTION WITH ALLOWANCE FOR THE ELECTRIC-FIELD IN THE NEUTRALLAYER OF THE PI-REGION()), Semiconductors, 29(11), 1995, pp. 1071-1075

Authors: URMANOV NA GAFUROVA MV

Citation: Na. Urmanov et Mv. Gafurova, EFFECT OF A SERIES RESISTANCE ON THE THERMALLY STIMULATED CURRENT IN A P-N-JUNCTION, Semiconductors, 29(10), 1995, pp. 942-945

Authors: URMANOV NA STEPANOVA MN

Citation: Na. Urmanov et Mn. Stepanova, ISOTHERMAL AND THERMALLY STIMULATED RELAXATION OF THE CURRENT AND CAPACITANCE IN A WEAKLY ASYMMETRIC P-N-JUNCTION WITH AN INHOMOGENEOUS DOPING PROFILE IN THE N-TYPE AND P-TYPE REGIONS, Semiconductors, 27(9), 1993, pp. 826-833

Authors: URMANOV NA GAFUROVA MV

Citation: Na. Urmanov et Mv. Gafurova, ANOMALOUS DOUBLET PEAKS IN THE CURRENT SPECTRA OF A P-N STRUCTURE, WHICH ARE LINKED WITH ONE TYPE OF DEEP STATES, Semiconductors, 27(9), 1993, pp. 848-851

Authors: URMANOV NA GAFUROVA MV

Citation: Na. Urmanov et Mv. Gafurova, INFLUENCE OF THE INITIAL OCCUPANCY OF DEEP CENTERS ON THE POSITION OFA PEAK OF A THERMALLY STIMULATED CURRENT FLOWING THROUGH A N-P JUNCTION WITH AN ARBITRARY RATIO OF THE CONCENTRATIONS OF SHALLOW AND DEEP CENTERS(), Semiconductors, 27(9), 1993, pp. 869-870