Authors: EMELIANOV VV ZEBREV GI ULIMOV VN USEINOV RG BELYAKOV VV PERSHENKOV VS

Citation: Vv. Emelianov et al., REVERSIBLE POSITIVE CHARGE ANNEALING IN MOS-TRANSISTOR DURING VARIETYOF ELECTRICAL AND THERMAL-STRESSES, IEEE transactions on nuclear science, 43(3), 1996, pp. 805-809