Authors:
TIMOFEEV FN
GUREVICH SA
SMIRNITSKII VB
GLADYSHEVA LB
YAVICH BS
USIKOV A
Citation: Fn. Timofeev et al., APPLICATION OF LOW-DEFECT REACTIVE ION ETCHING IN CL-2-BCL3 PLASMA INCOMBINATION WITH OVERGROWTH FOR FORMATION OF GAAS ALGAAS SUBMICROMETER STRUCTURES/, Semiconductor science and technology, 11(5), 1996, pp. 797-800