Authors: Udhayasankar, M Kumar, J Ramasamy, P Avasthi, DK Kabiraj, D

Citation: M. Udhayasankar et al., On the analysis of hydrogen in as grown and ion implanted GaAs single crystals, CRYST RES T, 35(10), 2000, pp. 1173-1182

Authors: Udhayasankar, M Kumar, J Ramasamy, P

Citation: M. Udhayasankar et al., New electrolytes for n-type InP and electrochemical C-V profiling of a semiconductor optical amplifier device structure, J SOL ST EL, 4(1), 1999, pp. 55-60

Authors: Udhayasankar, M Kumar, J Ramasamy, P

Citation: M. Udhayasankar et al., Investigations of beryllium in CBE grown epitaxial layers and profiling ofmultilayers by electro-chemical C-V measurements, MATER CH PH, 59(1), 1999, pp. 63-68

Authors: Jayavel, P Udhayasankar, M Kumar, J Asokan, K Kanjilal, D

Citation: P. Jayavel et al., Electrical characterisation of high energy C-12 irradiated Au/n-GaAs Schottky Barrier Diodes, NUCL INST B, 156(1-4), 1999, pp. 110-115

Authors: Udhayasankar, M Kumar, J Ramasamy, P Sekar, K Sundaravel, B Ferrari, C Lazzarini, L Magudapathy, P Nair, KGM

Citation: M. Udhayasankar et al., The study of structural properties of 100 keV hydrogen ion implanted semi-insulating GaAs single crystals, NUCL INST B, 149(4), 1999, pp. 451-459