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Results: 1-25 | 26-33 |
Results: 26-33/33
Effect of annealing on defects in As-grown and gamma-ray irradiated n-GaN layers
Authors: Shmidt, NM Davydov, DV Emtsev, VV Krestnikov, IL Lebedev, AA Lundin, WV Poloskin, DS Sakharov, AV Usikov, AS Osinsky, AV
Citation: Nm. Shmidt et al., Effect of annealing on defects in As-grown and gamma-ray irradiated n-GaN layers, PHYS ST S-B, 216(1), 1999, pp. 533-536
Mosaic structure and Si doping related peculiarities of charge carrier transport in III-V nitrides
Authors: Shmidt, NM Emtsev, VV Kryzhanovsky, AS Kyutt, RN Lundin, WV Poloskin, DS Ratnikov, VV Sakharov, AV Titkov, AN Usikov, AS Girard, P
Citation: Nm. Shmidt et al., Mosaic structure and Si doping related peculiarities of charge carrier transport in III-V nitrides, PHYS ST S-B, 216(1), 1999, pp. 581-586
Structural, vibrational and electronic properties of faceted GaN (000(1)over-bar) surfaces
Authors: Sloboshanin, S Tautz, FS Polyakov, VM Starke, U Usikov, AS Ber, BJ Schaefer, JA
Citation: S. Sloboshanin et al., Structural, vibrational and electronic properties of faceted GaN (000(1)over-bar) surfaces, SURF SCI, 428, 1999, pp. 250-256
Deep centers in AlGaN-based light emitting diode structures
Authors: Polyakov, AY Smirnov, NB Govorkov, AV Mil'vidskii, MG Usikov, AS Pushnyi, BV Lundin, WV
Citation: Ay. Polyakov et al., Deep centers in AlGaN-based light emitting diode structures, SOL ST ELEC, 43(10), 1999, pp. 1929-1936
Growth and characterization of thick Si-doped AlGaN epilayers on sapphire substrates
Authors: Lundin, WV Usikov, AS Sakharov, AV Tretyakov, VV Poloskin, DV Ledentsov, NN Hoffmann, A
Citation: Wv. Lundin et al., Growth and characterization of thick Si-doped AlGaN epilayers on sapphire substrates, PHYS ST S-A, 176(1), 1999, pp. 379-384
Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser
Authors: Krestnikov, IL Lundin, WV Sakharov, AV Semenov, VA Usikov, AS Tsatsul'nikov, AF Alferov, ZI Ledentsov, NN Hoffmann, A Bimberg, D
Citation: Il. Krestnikov et al., Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser, APPL PHYS L, 75(9), 1999, pp. 1192-1194
Surface-mode lasing from stacked InGaN insertions in a GaN matrix
Authors: Sakharov, AV Lundin, WV Krestnikov, IL Semenov, VA Usikov, AS Tsatsul'nikov, AF Musikhin, YG Baidakova, MV Alferov, ZI Ledentsov, NN Hoffmann, A Bimberg, D
Citation: Av. Sakharov et al., Surface-mode lasing from stacked InGaN insertions in a GaN matrix, APPL PHYS L, 74(26), 1999, pp. 3921-3923
Surface plasmons at MOCVD-grown GaN(000(1)over-bar)
Authors: Polyakov, VM Tautz, FS Sloboshanin, S Schaefer, JA Usikov, AS Ber, BJ
Citation: Vm. Polyakov et al., Surface plasmons at MOCVD-grown GaN(000(1)over-bar), SEMIC SCI T, 13(12), 1998, pp. 1396-1400
Risultati: 1-25 | 26-33 |